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When a semiconducting meterial is doped ...

When a semiconducting meterial is doped with an impurity,new acceptor levels are created .In a particular thermal collision,a valence electrons recives an energy equal to 2kT and just reaches one of the acceptor levels. Assuming that the energy of the electron was at the top edge of hte valence band and that the temperature T is equal to 300K, find the energy of the acceptor levels above the valence band.

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To solve the problem, we need to find the energy of the acceptor levels above the valence band when a valence electron receives energy equal to \(2kT\) and reaches the acceptor level. Here are the steps to find the solution: ### Step 1: Understand the given parameters - The energy received by the electron is \(2kT\). - The temperature \(T\) is given as \(300K\). - The Boltzmann constant \(k\) is approximately \(8.62 \times 10^{-5} \, \text{eV/K}\). ### Step 2: Calculate \(kT\) ...
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HC VERMA ENGLISH-SEMICONDUCTOR AND SEMICONDUCTOR DEVICES-exercises
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  2. The band gap for silicon is 1.1eV.(a)Find the ratio of the band gap to...

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  3. When a semiconducting meterial is doped with an impurity,new acceptor ...

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  4. The band gap between the valence and the conduction bands in zinc oxid...

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  5. Suppose the energy liberated in the in the recombination of a hole-ele...

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  6. find the maximum wavelength of electromagnetic radiation which can cre...

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  7. In a photodiode,the conductivity increases when the material is expose...

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  8. Let (Delta)Edenote the energy gap between the valence band and the con...

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  9. The conductivity of a pure semiconductor is roughly proportional to T^...

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  10. Estimate the porportion of boron impurity which will increase the con...

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  11. The product of the hole concentration and the conduction electron conc...

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  12. The conductivity of an intrinsic semiconductor depends on tempareture ...

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  13. A semiconducting material has a band gap if 1 eV.Acceptor impurities a...

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  14. In a p-n junction, the depletion region is 400nm wide and and electric...

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  15. The potential barrier exists across the junction is 0.2volt.What minim...

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  16. In a p-n junction,a potential barrier of 250 mev exsists across the ju...

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  17. When a p-n junction is reverse-biased,the current becomes almost const...

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  18. The drift current in a p-n junction is 20(mu)A.Estimate the number of ...

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  19. The current-voltage characteristic of an ideal p-n junction diode is g...

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  20. Consider a p-n junction diode having the characteristic i=i0(e^(eV//kT...

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