Home
Class 12
PHYSICS
Suppose the energy liberated in the in t...

Suppose the energy liberated in the in the recombination of a hole-electron pair is converted into electromagnetic radiation.If the maximum wavelength emmited is 820nm,What is the band gap?

A

0.5 e V

B

2.5 e V

C

1.5 e V

D

15 e V

Text Solution

AI Generated Solution

The correct Answer is:
To find the band gap energy (E_g) from the maximum wavelength emitted (820 nm), we can follow these steps: ### Step-by-Step Solution: 1. **Understand the relationship between energy and wavelength**: The energy of a photon can be calculated using the formula: \[ E = \frac{hc}{\lambda} \] where: - \( E \) is the energy, - \( h \) is Planck's constant (\( 6.626 \times 10^{-34} \, \text{J s} \)), - \( c \) is the speed of light (\( 3 \times 10^8 \, \text{m/s} \)), - \( \lambda \) is the wavelength in meters. 2. **Convert the wavelength from nanometers to meters**: Given the wavelength \( \lambda = 820 \, \text{nm} \): \[ \lambda = 820 \times 10^{-9} \, \text{m} \] 3. **Substitute the values into the energy formula**: \[ E = \frac{(6.626 \times 10^{-34} \, \text{J s})(3 \times 10^8 \, \text{m/s})}{820 \times 10^{-9} \, \text{m}} \] 4. **Calculate the energy**: \[ E = \frac{(6.626 \times 3) \times 10^{-34 + 8}}{820 \times 10^{-9}} \] \[ E = \frac{19.878 \times 10^{-26}}{820 \times 10^{-9}} \] \[ E = \frac{19.878}{820} \times 10^{-26 + 9} \] \[ E = 0.0242 \times 10^{-17} \, \text{J} \] \[ E \approx 2.42 \times 10^{-19} \, \text{J} \] 5. **Convert the energy from Joules to electron volts**: To convert Joules to electron volts, use the conversion factor \( 1 \, \text{eV} = 1.6 \times 10^{-19} \, \text{J} \): \[ E_g = \frac{2.42 \times 10^{-19} \, \text{J}}{1.6 \times 10^{-19} \, \text{J/eV}} \approx 1.51 \, \text{eV} \] 6. **Final Result**: The band gap energy \( E_g \) is approximately \( 1.51 \, \text{eV} \).

To find the band gap energy (E_g) from the maximum wavelength emitted (820 nm), we can follow these steps: ### Step-by-Step Solution: 1. **Understand the relationship between energy and wavelength**: The energy of a photon can be calculated using the formula: \[ E = \frac{hc}{\lambda} ...
Promotional Banner

Topper's Solved these Questions

  • SEMICONDUCTOR AND SEMICONDUCTOR DEVICES

    HC VERMA ENGLISH|Exercise Question for short answer|11 Videos
  • SEMICONDUCTOR AND SEMICONDUCTOR DEVICES

    HC VERMA ENGLISH|Exercise objective II|8 Videos
  • PHOTOMETRY

    HC VERMA ENGLISH|Exercise All Questions|38 Videos
  • SPEED OF LIGHT

    HC VERMA ENGLISH|Exercise Question for short Answer|5 Videos

Similar Questions

Explore conceptually related problems

The band gap between the valence and the conduction bands in zinc oxide (ZnO) is 3.0eV.Suppose an electron in the conduction band combines with a hole in the valence band and the excess energy is released in the form of electromagnetic radiation .Find the maximum wavelength that can be emitted in this process.

Find the velocity of photoelectrons liberated by electromagnetic radiation of wavelength lambda=18.0nm from stationary He^(+) ions in the ground state.

In Fig. electromagnetic radiations of wavelength 200nm are incident on a metallic plate A. the photoelectrons are accelerated by a potential difference of 10 V. These electrons strike another metal plate B from which electromagnetic radiations are emitted. The minimum wavelength of emitted photons is 100nm. If the work function of metal A is found to be (xxx10^-1)ev , then find the value of x. (Given hc=1240eV nm)

If the wavelength of an electromagnetic radiation is 2000 A. what is its energy in ergs?

The energy required to stop ejection of electrons from a Cu plate is 0.24 eV .Calculate the work function Cu when a radiation of wavelength lambda = 250 nm strikes the plate

The electrical conductivity of a semiconductor increases when electromagnetic radiation of wavelength shorter than 2480 nm is incident on it. Find the band gap of the semiconductor.

In a photodiode,the conductivity increases when the material is exposed to light.It is found that the conductivity changes only if the wavelength is less than 620nm.What is the band gap?

The electrical conductivity of a semiconductor increases when electromagnetic radiation of wavelength shorter than 2480 nm is incident on it. The band gap in (eV) for the semiconductor is.

The electrical conductivity of semicondutor increases when electromagnetic radiation of wavelength shorter than 24800Å is incident on it. The band gap for the semiconductor is

The maximum kinetic energy of electron if wavelenght of incident electromagnetic wave is 260 nm and cut-off wvelenght is 380 nm given hc = 1237nm.eV is

HC VERMA ENGLISH-SEMICONDUCTOR AND SEMICONDUCTOR DEVICES-exercises
  1. When a semiconducting meterial is doped with an impurity,new acceptor ...

    Text Solution

    |

  2. The band gap between the valence and the conduction bands in zinc oxid...

    Text Solution

    |

  3. Suppose the energy liberated in the in the recombination of a hole-ele...

    Text Solution

    |

  4. find the maximum wavelength of electromagnetic radiation which can cre...

    Text Solution

    |

  5. In a photodiode,the conductivity increases when the material is expose...

    Text Solution

    |

  6. Let (Delta)Edenote the energy gap between the valence band and the con...

    Text Solution

    |

  7. The conductivity of a pure semiconductor is roughly proportional to T^...

    Text Solution

    |

  8. Estimate the porportion of boron impurity which will increase the con...

    Text Solution

    |

  9. The product of the hole concentration and the conduction electron conc...

    Text Solution

    |

  10. The conductivity of an intrinsic semiconductor depends on tempareture ...

    Text Solution

    |

  11. A semiconducting material has a band gap if 1 eV.Acceptor impurities a...

    Text Solution

    |

  12. In a p-n junction, the depletion region is 400nm wide and and electric...

    Text Solution

    |

  13. The potential barrier exists across the junction is 0.2volt.What minim...

    Text Solution

    |

  14. In a p-n junction,a potential barrier of 250 mev exsists across the ju...

    Text Solution

    |

  15. When a p-n junction is reverse-biased,the current becomes almost const...

    Text Solution

    |

  16. The drift current in a p-n junction is 20(mu)A.Estimate the number of ...

    Text Solution

    |

  17. The current-voltage characteristic of an ideal p-n junction diode is g...

    Text Solution

    |

  18. Consider a p-n junction diode having the characteristic i=i0(e^(eV//kT...

    Text Solution

    |

  19. Calculate the current through the circuit and the petential difference...

    Text Solution

    |

  20. Each of the resistance shown in figure has a value of 20 Omega.Find th...

    Text Solution

    |