The product of the hole concentration and the conduction electron concentration turns out to be independent of the amount of any impurity doped. The concentration of conduction electrons in germanium is `6xx10^19`per cubic metre. When some phosphorus impurity is doped into a germanium sample, the concentration of conduction electrons increases to `2xx10^28`per cubic metre.Find the concentration of the holes in the doped germanium.

Explanation

To find the concentration of holes in the doped germanium, we will follow these steps:

### Step 1: Understand the relationship between electron and hole concentrations
In an intrinsic semiconductor, the product of the electron concentration (\(n\)) and hole concentration (\(p\)) is constant and equal to the square of the intrinsic carrier concentration (\(n_i\)):
\[ n_i^2 = n \cdot p \]

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