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A block of pure silicon at 300 K has a l...

A block of pure silicon at `300 K` has a length of `10 cm` and an area of `1.0 cm^(2)`. A battery of emf `2V` is connected across it. The mobility of electron is `0.14 m^(2) v^(-1) S^(-1)` and their number density is `1.5 xx 10^(16) m^(-3)`. The mobility of holes is `0.05 m^(2) v^(-1) S^(-1)`.
The electron current is

A

`6.72xx10^(-4)` A

B

`6.72xx10^(-5)` A

C

`6.72xx10^(-6)` A

D

`6.72xx10^(-7)` A

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The correct Answer is:
To find the electron current in the given silicon block, we can follow these steps: ### Step 1: Calculate the Electric Field (E) The electric field (E) in the silicon block can be calculated using the formula: \[ E = \frac{V}{L} \] Where: - \( V \) is the voltage (emf of the battery) = 2 V - \( L \) is the length of the silicon block = 10 cm = 0.1 m Substituting the values: \[ E = \frac{2 \, \text{V}}{0.1 \, \text{m}} = 20 \, \text{V/m} \] ### Step 2: Calculate the Drift Velocity (v_d) The drift velocity of the electrons can be calculated using the formula: \[ v_d = \mu_n \cdot E \] Where: - \( \mu_n \) is the mobility of electrons = 0.14 m²/V·s - \( E \) is the electric field calculated in Step 1 = 20 V/m Substituting the values: \[ v_d = 0.14 \, \text{m}^2/\text{V·s} \cdot 20 \, \text{V/m} = 2.8 \, \text{m/s} \] ### Step 3: Calculate the Electron Current (I) The electron current can be calculated using the formula: \[ I = n \cdot A \cdot v_d \cdot e \] Where: - \( n \) is the number density of electrons = \( 1.5 \times 10^{16} \, \text{m}^{-3} \) - \( A \) is the cross-sectional area = 1.0 cm² = \( 1.0 \times 10^{-4} \, \text{m}^2 \) - \( v_d \) is the drift velocity calculated in Step 2 = 2.8 m/s - \( e \) is the charge of an electron = \( 1.6 \times 10^{-19} \, \text{C} \) Substituting the values: \[ I = (1.5 \times 10^{16} \, \text{m}^{-3}) \cdot (1.0 \times 10^{-4} \, \text{m}^2) \cdot (2.8 \, \text{m/s}) \cdot (1.6 \times 10^{-19} \, \text{C}) \] Calculating this step-by-step: 1. Calculate \( n \cdot A \): \[ n \cdot A = 1.5 \times 10^{16} \cdot 1.0 \times 10^{-4} = 1.5 \times 10^{12} \] 2. Calculate \( n \cdot A \cdot v_d \): \[ n \cdot A \cdot v_d = 1.5 \times 10^{12} \cdot 2.8 = 4.2 \times 10^{12} \] 3. Finally, calculate the current \( I \): \[ I = 4.2 \times 10^{12} \cdot 1.6 \times 10^{-19} = 6.72 \times 10^{-7} \, \text{A} \] ### Final Answer The electron current is: \[ I = 6.72 \times 10^{-7} \, \text{A} \] ---

To find the electron current in the given silicon block, we can follow these steps: ### Step 1: Calculate the Electric Field (E) The electric field (E) in the silicon block can be calculated using the formula: \[ E = \frac{V}{L} \] ...
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NCERT FINGERTIPS ENGLISH-SEMICONDUCTOR ELECTRONICS : MATERIALS , DEVICES AND SIMPLE CIRCUITS -Assertion And Reason
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  2. Assertion: If there is some gap between the conduction band and the va...

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  3. Assertion : The electrons in the conduction band have higher energy th...

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  5. Assertion: The probability of electrons to be found in the conduction ...

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  6. Assertion: The conductivity of an intrinsic semiconductor depends on i...

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  7. Assertion: The conductivity of an intrinsic semiconductor depends on i...

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  8. Assertion: Thickness of depletion layer is fixed in all semiconductor ...

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  9. Assertion: Zener diode works on aa principle of of breakdown voltage. ...

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  10. Assertion : Zener diode is used to obtain voltage regulation Reason ...

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  12. Assertion : In a transistor the base is made thin. Reason: A thin b...

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