Home
Class 12
PHYSICS
Suppose a pure Si-crystal has 5xx10^(28)...

Suppose a pure Si-crystal has `5xx10^(28) "atoms" m^(-3)`. It is doped by 1 ppm concentration of pentavalent As. Calculate the number of electrons and holes. Give that `n_(i)=1.5xx10^(16)m^(-3)`.

A

`4.5xx10^9 m^(-3)`

B

`4.5xx10^6 m^(-3)`

C

`2.5xx10^9 m^(-3)`

D

`2.5xx10^6 m^(-3)`

Text Solution

AI Generated Solution

The correct Answer is:
To solve the problem, we will follow these steps: ### Step 1: Calculate the number of pentavalent atoms doped in the silicon crystal. Given that the concentration of silicon atoms is \(5 \times 10^{28} \, \text{atoms/m}^3\) and the doping concentration is 1 ppm (parts per million), we can express 1 ppm as: \[ 1 \, \text{ppm} = \frac{1}{10^6} \] Now, we can calculate the number of pentavalent atoms doped in the silicon crystal: \[ \text{Number of doped atoms} = \text{Total atoms} \times \text{Doping concentration} \] \[ \text{Number of doped atoms} = 5 \times 10^{28} \, \text{atoms/m}^3 \times \frac{1}{10^6} = 5 \times 10^{22} \, \text{atoms/m}^3 \] ### Step 2: Determine the number of free electrons contributed by the doped atoms. Since each pentavalent atom (like arsenic, As) donates one free electron to the silicon crystal, the number of free electrons (\(n_e\)) will be equal to the number of doped atoms: \[ n_e = 5 \times 10^{22} \, \text{electrons/m}^3 \] ### Step 3: Calculate the hole concentration using the intrinsic carrier concentration. We are given the intrinsic carrier concentration \(n_i = 1.5 \times 10^{16} \, \text{m}^{-3}\). The relationship between the electron concentration (\(n_e\)), hole concentration (\(n_h\)), and intrinsic carrier concentration (\(n_i\)) is given by: \[ n_i^2 = n_e \cdot n_h \] Rearranging this equation to find the hole concentration: \[ n_h = \frac{n_i^2}{n_e} \] Substituting the values: \[ n_h = \frac{(1.5 \times 10^{16})^2}{5 \times 10^{22}} \] Calculating \(n_i^2\): \[ n_i^2 = (1.5 \times 10^{16})^2 = 2.25 \times 10^{32} \] Now substituting back into the equation for \(n_h\): \[ n_h = \frac{2.25 \times 10^{32}}{5 \times 10^{22}} = 4.5 \times 10^{9} \, \text{holes/m}^3 \] ### Final Results: - Number of free electrons (\(n_e\)): \(5 \times 10^{22} \, \text{electrons/m}^3\) - Number of holes (\(n_h\)): \(4.5 \times 10^{9} \, \text{holes/m}^3\)

To solve the problem, we will follow these steps: ### Step 1: Calculate the number of pentavalent atoms doped in the silicon crystal. Given that the concentration of silicon atoms is \(5 \times 10^{28} \, \text{atoms/m}^3\) and the doping concentration is 1 ppm (parts per million), we can express 1 ppm as: \[ 1 \, \text{ppm} = \frac{1}{10^6} ...
Promotional Banner

Topper's Solved these Questions

  • SEMICONDUCTOR ELECTRONICS : MATERIALS , DEVICES AND SIMPLE CIRCUITS

    NCERT FINGERTIPS ENGLISH|Exercise HOTS|8 Videos
  • SEMICONDUCTOR ELECTRONICS : MATERIALS , DEVICES AND SIMPLE CIRCUITS

    NCERT FINGERTIPS ENGLISH|Exercise NCERT|8 Videos
  • RAY OPTICS AND OPTICAL INSTRUMENTS

    NCERT FINGERTIPS ENGLISH|Exercise NCERT Exemplar|11 Videos
  • WAVE OPTICS

    NCERT FINGERTIPS ENGLISH|Exercise Assertion And Reason|15 Videos

Similar Questions

Explore conceptually related problems

Suppose a pure Si-crystal has 6xx10^(28) "atoms" m^(-3) . It is doped by 1 ppm concentration of pentavalent As. Calculate the number of electrons and holes. Give that n_(i)=1.5xx10^(16)m^(-3) .

The number of silicon atoms per m^(3) is 5xx10^(28) . This is doped simultaneously with 5xx10^(22) atoms per m^(3) of Arsenic and 5xx10^(20) per m^(3) atoms of indium. Calculate the number of electrons and holes. Given that n_(i)=1.5xx10^(16)m^(-3) . Is the material n-type or p-type?

Suppose a 'n'- type wafer is created by doping Si crystal having 5xx10^(28) "atoms"//m^(3) with 1 ppm concentration of As. On the surfabe 200 ppm Boron is added to create 'p' region in this wafer. Considering n_(i)=1.5xx10^(16)m^(-3) , (i) Calculate the densities of the charge carriers in the n & p regions. (ii) Comment which charge carriers would contribute largely for the reverse saturation current when diode is reverse biased.

Calculate the pH of 1.0xx10^(3) M solution of NaCI

A wire of radius 10^(-3)m and length 2m is stretched by a force of 50 N. Calculate the fundamental frequency of the note emitted by it. Density of wire is 1.6. xx 10^(3)" kg m"^(-3) .

Find the number from the expanded form : 8xx10^(5)+(1xx10^(3))+(5xx10^(1))

A Ge specimen is dopped with Al . The concentration of acceptor atoms is ~10^(21) at oms//m^(3) . Given that the intrinsic concentration of electron hole pairs is ~10^(19)//m^(3) , the concentration of electron in the speciman is

The solubility proudct of AgCl at 25^(@)C is 1xx10^(-10) A solution of Ag^(+) at a concentration 4xx10^(-3) M just fails to yield a prenciitate of AgCl with concentration of 1xx10^(-3) M Cl^(-) when the concentration of NH_(3) in the solution is 2xx10^(-2)M. Calculate the equlibrium constant for [Ag(NH_(3))_(2))hArrAg^(+)+2NH_(3)

In the question number 59, the value of velocity of the revolving electron is ( radius r is 5.3xx10^-11m )

Estimate the average drift speed of conduction electrons in a copper wire of cross-sectional area 1.0xx10^(-7)m^(2) carrying a current of 1.5xx10^(-19) A. Assume the density of conduction electrons to be 9xx10^(28)m^(-3) .

NCERT FINGERTIPS ENGLISH-SEMICONDUCTOR ELECTRONICS : MATERIALS , DEVICES AND SIMPLE CIRCUITS -Assertion And Reason
  1. Suppose a pure Si-crystal has 5xx10^(28) "atoms" m^(-3). It is doped b...

    Text Solution

    |

  2. Assertion: If there is some gap between the conduction band and the va...

    Text Solution

    |

  3. Assertion : The electrons in the conduction band have higher energy th...

    Text Solution

    |

  4. Assertion : In a semiconductor, the conduction electrons have a higher...

    Text Solution

    |

  5. Assertion: The probability of electrons to be found in the conduction ...

    Text Solution

    |

  6. Assertion: The conductivity of an intrinsic semiconductor depends on i...

    Text Solution

    |

  7. Assertion: The conductivity of an intrinsic semiconductor depends on i...

    Text Solution

    |

  8. Assertion: Thickness of depletion layer is fixed in all semiconductor ...

    Text Solution

    |

  9. Assertion: Zener diode works on aa principle of of breakdown voltage. ...

    Text Solution

    |

  10. Assertion : Zener diode is used to obtain voltage regulation Reason ...

    Text Solution

    |

  11. Assertion: The semiconductor used for fabrication of visible LEDs must...

    Text Solution

    |

  12. Assertion : In a transistor the base is made thin. Reason: A thin b...

    Text Solution

    |

  13. Assertion : Two p-n junction diodes placed back to back, will work as ...

    Text Solution

    |

  14. Assertion : In an oscillator, the feedback is in the same phase which ...

    Text Solution

    |

  15. Assertion : In an OR gate if any of the input is high, the output is h...

    Text Solution

    |

  16. Assertion: This circuit acts as OR Gate. Reason: Truth table for...

    Text Solution

    |