Home
Class 12
PHYSICS
In a p-n junction diode made with Ge, th...

In a p-n junction diode made with Ge, the thickness of depletion layer is `2xx10^(-6)`m and barrier potential is 0.3V. Find the strength of the electric field at the junction.

Text Solution

Verified by Experts

`1.5xx10^(5)Vm^(-1)` from n to pside`
Promotional Banner

Topper's Solved these Questions

  • SEMICONDUCTOR DEVICES

    AAKASH SERIES|Exercise Problems (LEVEL-II)|7 Videos

  • SEMICONDUCTOR DEVICES

    AAKASH SERIES|Exercise EXAMPLES|56 Videos

  • SEMICONDUCTOR DEVICES

    AAKASH SERIES|Exercise Exercise (very Short answer questions)|11 Videos

  • RAY OPTICS

    AAKASH SERIES|Exercise PROBLEMS ( LEVEL-II)|50 Videos

  • UNITS AND MEASUREMENT

    AAKASH SERIES|Exercise PRACTICE EXERCISE|45 Videos

Similar Questions

Explore conceptually related problems

When a p-n junction diode is reverse biased, the thickness of the depletion layer

What is p-n junction diode ? Define depletion layer.

AAKASH SERIES-SEMICONDUCTOR DEVICES-Problems (LEVEL-I)
  1. In a pure semiconductor, the number of conduction electrons is 6xx10^(...

    Text Solution

    |

  2. Find the static resistance of a P-N junction germanium diode if temper...

    Text Solution

    |

  3. In a p-n junction diode made with Ge, the thickness of depletion layer...

    Text Solution

    |

  4. A potential barrier of 0.3V exists across a P-N junction (a) If the de...

    Text Solution

    |

  5. A junction diode is connected to an external resistance of 100Omega an...

    Text Solution

    |

  6. The junction diode shown in figure is ideal. Find the current in the c...

    Text Solution

    |

  7. Determine the current through a silicon diode of (barrier potential = ...

    Text Solution

    |

  8. Find the current in the circuit shown below

    Text Solution

    |

  9. Calculate the current flowing in the circuit below which has two oppos...

    Text Solution

    |

  10. The circuit shown below contains two diodes, each of forward resistanc...

    Text Solution

    |

  11. An ideal p-n junction diode can withstand currents up to 10mA under fo...

    Text Solution

    |

  12. The resistance of the diode in the forward biased condition is 200Omeg...

    Text Solution

    |

  13. Find maximum voltage across AB in the circuit shown in figure. Assume ...

    Text Solution

    |

  14. A diode used in the circuit shown in fig. below, has a constant voltag...

    Text Solution

    |

  15. For the circuit shown in Fig. find 1) the output voltage 2) the vo...

    Text Solution

    |

  16. For a transistor a = 0.98 and emitter current I(E) = 2.5 mA. Calculate...

    Text Solution

    |

  17. In common base configuration of a transistor, a change of 200 mV in em...

    Text Solution

    |

  18. In a transistor the emitter current is 1.01 times as large as the coll...

    Text Solution

    |

  19. A change of 0.5 mA in the emitter current of a transistor produces a c...

    Text Solution

    |

  20. A change of 200mV in base-emitter voltage causes a change of 1004A in ...

    Text Solution

    |