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AAKASH SERIES-SEMICONDUCTOR DEVICES-Problems (LEVEL-I)
- Find the static resistance of a P-N junction germanium diode if temper...
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- In a p-n junction diode made with Ge, the thickness of depletion layer...
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- A potential barrier of 0.3V exists across a P-N junction (a) If the de...
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- A junction diode is connected to an external resistance of 100Omega an...
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- The junction diode shown in figure is ideal. Find the current in the c...
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- Determine the current through a silicon diode of (barrier potential = ...
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- Find the current in the circuit shown below
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- Calculate the current flowing in the circuit below which has two oppos...
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- The circuit shown below contains two diodes, each of forward resistanc...
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- An ideal p-n junction diode can withstand currents up to 10mA under fo...
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- The resistance of the diode in the forward biased condition is 200Omeg...
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- Find maximum voltage across AB in the circuit shown in figure. Assume ...
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- A diode used in the circuit shown in fig. below, has a constant voltag...
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- For the circuit shown in Fig. find 1) the output voltage 2) the vo...
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- For a transistor a = 0.98 and emitter current I(E) = 2.5 mA. Calculate...
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- In common base configuration of a transistor, a change of 200 mV in em...
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- In a transistor the emitter current is 1.01 times as large as the coll...
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- A change of 0.5 mA in the emitter current of a transistor produces a c...
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- A change of 200mV in base-emitter voltage causes a change of 1004A in ...
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- AP-N-P transistor is used in common-emitter mode in an amplifier circu...
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