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A semiconductor has an electron concentr...

A semiconductor has an electron concentration of `0.45 xx 10^(12) m^(-3)` and a hole concentration of `5.0 xx 10^(20) m^(-3)` Calculate its conductivity. Given electron mobility `=0.135 m^2 V^(-1) s^(-1)` , hole mobility` =0.048m^2 V^(-1) s^(-1) `

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The conductivity of a semiconductor is the sum of the conductivities due to electrons and holes and is given by
`sigma = sigma_e + sigma_h = n_e e mu _e + n_h e mu_h = e ( n_e mu_e +n_h mu_h)`
As per given date, n is negligible as compared to n, so that we can write
` sigma = e n_h mu_h `
`= ( 1.6 xx 10^(-19)C )/ ( 5.0 xx 10^(20) m^(-3) ) ( 0.048 m^2 V^(-1) S^(-1))`
`= 3.84 Omega^(-1) m^(-1) = 3.84 S m^(-1)`
where S (siemen) stands for `Omega^(-1)`
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AAKASH SERIES-SEMICONDUCTOR DEVICES-EXAMPLES
  1. Pure Si at 300 K has equal electron (n(e)) and hole (n(h)) concentrati...

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  2. Suppose a pure Si crystal has 5 xx 10^(28) atoms m^(-3). It is doped ...

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  3. A semiconductor has an electron concentration of 0.45 xx 10^(12) m^(-...

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  4. An N-type silicon sample of width 4 xx10^(-3) m thickness 0.25mm and ...

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  5. The V-I characteristic of a silicon diode is shown in the Fig. Calcula...

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  10. In a p-n junction diode, the depletion region is 400 nm wide and an el...

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  14. A potential barrier of 0.50 V exists across a p-n junction. An elec...

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  15. The circuit shown below contains two diodes, each of forward resistanc...

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  16. The applied input ac power to a half wave rectifier is 100 W. The dc o...

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  17. A p-n diode is used in a half wave rectifier with a load resistance of...

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  18. A full wave rectifier uses two diodes with a load resistance of 100 O...

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  19. The current through a P-N junction diode is 55mA at a forward bias vol...

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