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AAKASH SERIES-SEMICONDUCTOR DEVICES-EXAMPLES
- Pure Si at 300 K has equal electron (n(e)) and hole (n(h)) concentrati...
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- Suppose a pure Si crystal has 5 xx 10^(28) atoms m^(-3). It is doped ...
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- A semiconductor has an electron concentration of 0.45 xx 10^(12) m^(-...
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- An N-type silicon sample of width 4 xx10^(-3) m thickness 0.25mm and ...
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- The V-I characteristic of a silicon diode is shown in the Fig. Calcula...
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- The V-I characteristic of a silicon diode is shown in the Fig. Calcula...
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- Find maximum voltage across AB in the circuit shown in figure. Assume ...
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- In the given circuit diagram. VB ~~0.6V Calculate the current i in...
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- In the given circuit diagram. VB ~~0.6V Find the current (I) if th...
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- In a p-n junction diode, the depletion region is 400 nm wide and an el...
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- Two junction diodes, one of germanium (Ge) and other of silicon (Si) a...
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- In the circuit shown, the potential drop across each capacitor is (ass...
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- A potential barrier of 0.50 V exists across a p-n junction. If the...
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- A potential barrier of 0.50 V exists across a p-n junction. An elec...
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- The circuit shown below contains two diodes, each of forward resistanc...
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- The applied input ac power to a half wave rectifier is 100 W. The dc o...
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- A p-n diode is used in a half wave rectifier with a load resistance of...
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- A full wave rectifier uses two diodes with a load resistance of 100 O...
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- The current through a P-N junction diode is 55mA at a forward bias vol...
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- Considering the circuit and data given in the diagram calculate the cu...
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