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Let np, and nc be the numbers of holes a...

Let `n_p`, and `n_c` be the numbers of holes and conduction electrons in an intrinsic semiconductor.

A

`np gt n_c`

B

`n_p = n_e`

C

`n_p lt n_e`

D

`n_p ne n_e`

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The correct Answer is:
B
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AAKASH SERIES-SEMICONDUCTOR DEVICES-EXERCISE -I (ENERGY BANDS AND CLASSIFICATION OF SOLIDS )
  1. In case of a semi conductor, which one of the following statements is ...

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  2. An electric field is applied to a semiconductor. Let the number of cha...

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  3. Let np, and nc be the numbers of holes and conduction electrons in an ...

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  4. If the two ends of a p-n junction are joined by a wire

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  5. The drift current in a p-n junction is

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  6. The diffusion current in a p - n junction is

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  7. Diffusion current in a p-n junction is greater than the drift current ...

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  8. At absolute zero temperature, a crystal of pure Germanium

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  9. In an intrinsic semiconductor, the fermi energy level lies

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  10. Which of the following statements is not true?

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  11. The mobility of electrons is greater than that of holes. Because they

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  12. Pick out the incorrect statement regarding reverse saturation current ...

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  13. The value indicated by fermi-energy level in an intrinsic semiconducto...

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  14. A pure semi conductor has

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  15. The conductivity of semi conductors like Si or Ge

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  16. A doped semiconductor is

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  17. The potential in the depletion layer is due to

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  18. A hole is

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  19. The donor impurity to be added for doping germanium crystal, will be o...

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  20. A P-type semiconductor can be formed by doping Si or Ge with

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