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AAKASH SERIES-SEMICONDUCTOR DEVICES-EXERCISE -I (ENERGY BANDS AND CLASSIFICATION OF SOLIDS )
- If the two ends of a p-n junction are joined by a wire
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- The drift current in a p-n junction is
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- The diffusion current in a p - n junction is
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- Diffusion current in a p-n junction is greater than the drift current ...
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- At absolute zero temperature, a crystal of pure Germanium
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- In an intrinsic semiconductor, the fermi energy level lies
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- Which of the following statements is not true?
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- The mobility of electrons is greater than that of holes. Because they
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- Pick out the incorrect statement regarding reverse saturation current ...
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- The value indicated by fermi-energy level in an intrinsic semiconducto...
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- A pure semi conductor has
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- The conductivity of semi conductors like Si or Ge
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- A doped semiconductor is
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- The potential in the depletion layer is due to
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- A hole is
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- The donor impurity to be added for doping germanium crystal, will be o...
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- A P-type semiconductor can be formed by doping Si or Ge with
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- An n-type semi conductor can be formed by doping Si or Ge with
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- An-type and P-type silicon can be obtained by doping pure silicon with
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- At room temperature, a p-type semiconductor has
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