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In an intrinsic semiconductor, the fermi...

In an intrinsic semiconductor, the fermi energy level lies

A

nearer to valence band

B

nearer to conduction band

C

exactly at the middle of the forbidden energy gap

D

Cant' say

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The correct Answer is:
C
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In intrinsic semiconductor

Consider the following statement A and B and identify the correct choice of the given answer. A. The width of the depletion layer in a p-n junction diode increases in forward bias. B. In a intrinsic semiconductor the fermi energy level is exactly in the middle of the forbidden energy gap.

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AAKASH SERIES-SEMICONDUCTOR DEVICES-EXERCISE -I (ENERGY BANDS AND CLASSIFICATION OF SOLIDS )
  1. Diffusion current in a p-n junction is greater than the drift current ...

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  2. At absolute zero temperature, a crystal of pure Germanium

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  3. In an intrinsic semiconductor, the fermi energy level lies

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  4. Which of the following statements is not true?

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  5. The mobility of electrons is greater than that of holes. Because they

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  6. Pick out the incorrect statement regarding reverse saturation current ...

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  7. The value indicated by fermi-energy level in an intrinsic semiconducto...

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  8. A pure semi conductor has

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  9. The conductivity of semi conductors like Si or Ge

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  10. A doped semiconductor is

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  11. The potential in the depletion layer is due to

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  12. A hole is

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  13. The donor impurity to be added for doping germanium crystal, will be o...

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  14. A P-type semiconductor can be formed by doping Si or Ge with

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  15. An n-type semi conductor can be formed by doping Si or Ge with

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  16. An-type and P-type silicon can be obtained by doping pure silicon with

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  17. At room temperature, a p-type semiconductor has

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  18. In an n-type semiconductor, the fermi energy level lies

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  19. The band diagrams of three semiconductors are given in the figure. Fro...

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  20. The element that can be used as an acceptor impurity to doped silicon ...

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