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A P-type semiconductor can be formed by ...

A P-type semiconductor can be formed by doping Si or Ge with

A

Boron

B

Aluminium

C

Galium

D

All the above

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The correct Answer is:
D
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AAKASH SERIES-SEMICONDUCTOR DEVICES-EXERCISE -I (ENERGY BANDS AND CLASSIFICATION OF SOLIDS )
  1. In an intrinsic semiconductor, the fermi energy level lies

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  2. Which of the following statements is not true?

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  3. The mobility of electrons is greater than that of holes. Because they

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  4. Pick out the incorrect statement regarding reverse saturation current ...

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  5. The value indicated by fermi-energy level in an intrinsic semiconducto...

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  6. A pure semi conductor has

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  7. The conductivity of semi conductors like Si or Ge

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  8. A doped semiconductor is

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  9. The potential in the depletion layer is due to

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  10. A hole is

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  11. The donor impurity to be added for doping germanium crystal, will be o...

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  12. A P-type semiconductor can be formed by doping Si or Ge with

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  13. An n-type semi conductor can be formed by doping Si or Ge with

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  14. An-type and P-type silicon can be obtained by doping pure silicon with

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  15. At room temperature, a p-type semiconductor has

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  16. In an n-type semiconductor, the fermi energy level lies

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  17. The band diagrams of three semiconductors are given in the figure. Fro...

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  18. The element that can be used as an acceptor impurity to doped silicon ...

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  19. In extrinsic semiconductors

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  20. If an intrinsic semiconductor is heated, the ratio of free electrons t...

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