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In an unbiased p-n junction, holes diffu...

In an unbiased p-n junction, holes diffuse from the p-region ton-region because
(a) free electron in the n-region attract them.
(b ) they move across the junction by the potential difference.
(c ) hole concentration in p-region is more as compared to n-region.
(d ) All the above.

A

free electrons in the n-region attract them.

B

they move across the junction by the potential difference.

C

hole concentration in p-region is more as compared to n-region

D

All the above

Text Solution

Verified by Experts

The correct Answer is:
C
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  6. The electrical resistance of depletion layer is large because

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  7. In a PN junction

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  8. The barrier potentials for silicon and Germanium diodes are about

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  9. The dominant mechanisms for motion of charge carriers in forward and r...

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  10. In a semi conductor diode, the barrier potential opposes diffusion of

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  11. The correct curve between potential and distance near P-N junction is

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  12. When p-n junction diode is forward biased

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  15. The resistance of an ideal diode in reverse biased condition is

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  16. In forward biased condition, the p-n junction diode behaves as

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  17. Reverse bias applied to a junction diode

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  18. In the middle of the depletion layer of a reverse biased p-n junction,...

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