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One slab of p type, if physically join t...

One slab of p type, if physically join to another n type semiconductor, there is no possibility for the formation of pn junction because

A

Continuous contact at the atomic level is not possible

B

The junction behaves as a discontinuity for the flow

C

The roughness is much larger than interatomic crystal spacing

D

All the above

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The correct Answer is:
D
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AAKASH SERIES-SEMICONDUCTOR DEVICES-EXERCISE -I (P-N JUNCTION DIODE)
  1. The potential barrier at a P-n junction is due to the charges on eithe...

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  2. In an unbiased p-n junction, holes diffuse from the p-region ton-regio...

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  3. One slab of p type, if physically join to another n type semiconductor...

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  4. If a p-n junction diode is not connected to any circuit,

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  5. The electrical resistance of depletion layer is large because

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  6. In a PN junction

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  7. The barrier potentials for silicon and Germanium diodes are about

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  8. The dominant mechanisms for motion of charge carriers in forward and r...

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  9. In a semi conductor diode, the barrier potential opposes diffusion of

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  10. The correct curve between potential and distance near P-N junction is

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  11. When p-n junction diode is forward biased

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  12. Which of the following statement is not correct when a junction diode ...

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  13. The resistance of an ideal diode in forward biased condition is

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  14. The resistance of an ideal diode in reverse biased condition is

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  15. In forward biased condition, the p-n junction diode behaves as

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  16. Reverse bias applied to a junction diode

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  17. In the middle of the depletion layer of a reverse biased p-n junction,...

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  18. Avalanche breakdown in a semiconductor diode occurs when

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  19. When a P-n junction diode is reverse biased the flow of current across...

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  20. The small currents in reverse biased condition of p-n diode are due to

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