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The barrier potentials for silicon and G...

The barrier potentials for silicon and Germanium diodes are about

A

0.7V , 0.3V

B

0.2V, 0.3 volts

C

1.1V, 0.7V

D

1.1V , 0.3V

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The correct Answer is:
A
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AAKASH SERIES-SEMICONDUCTOR DEVICES-EXERCISE -I (P-N JUNCTION DIODE)
  1. The electrical resistance of depletion layer is large because

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  2. In a PN junction

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  3. The barrier potentials for silicon and Germanium diodes are about

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  4. The dominant mechanisms for motion of charge carriers in forward and r...

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  5. In a semi conductor diode, the barrier potential opposes diffusion of

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  6. The correct curve between potential and distance near P-N junction is

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  7. When p-n junction diode is forward biased

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  8. Which of the following statement is not correct when a junction diode ...

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  9. The resistance of an ideal diode in forward biased condition is

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  10. The resistance of an ideal diode in reverse biased condition is

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  11. In forward biased condition, the p-n junction diode behaves as

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  12. Reverse bias applied to a junction diode

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  13. In the middle of the depletion layer of a reverse biased p-n junction,...

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  14. Avalanche breakdown in a semiconductor diode occurs when

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  15. When a P-n junction diode is reverse biased the flow of current across...

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  16. The small currents in reverse biased condition of p-n diode are due to

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  17. A P-n junction diode can be used as

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  18. A diode as a rectifier converts

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  19. In half-wave rectifier, maximum percentage of A.C. power that can be c...

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  20. In a half-wave rectifier, the load current flows for

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