Home
Class 12
PHYSICS
The resistance of an ideal diode in forw...

The resistance of an ideal diode in forward biased condition is

A

zero

B

infinity

C

finite

D

negative

Text Solution

Verified by Experts

The correct Answer is:
A
Promotional Banner

Topper's Solved these Questions

  • SEMICONDUCTOR DEVICES

    AAKASH SERIES|Exercise EXERCISE -I (TRANSISTORS)|24 Videos

  • SEMICONDUCTOR DEVICES

    AAKASH SERIES|Exercise EXERCISE -I (LOGIC GATES)|17 Videos

  • SEMICONDUCTOR DEVICES

    AAKASH SERIES|Exercise EXERCISE -I (ENERGY BANDS AND CLASSIFICATION OF SOLIDS )|43 Videos

  • RAY OPTICS

    AAKASH SERIES|Exercise PROBLEMS ( LEVEL-II)|50 Videos

  • UNITS AND MEASUREMENT

    AAKASH SERIES|Exercise PRACTICE EXERCISE|45 Videos

Similar Questions

Explore conceptually related problems

The resistance of the diode in the forward biased condition is 200 Omega and infinity in the reverse biased condition. Find the current in the given circuit

A diode is

The voltage-current characteristic of a diode during forward bias is given by I = 7.8 xx 10^(-5) e^(6.9V_(D)) , where I is the current in mA and V_(D) is the diode voltage in V. Find the dynamic resistance of the diode in Omega , when the current is 4mA.

What is a junction diode ? Explain the formation of depletion region at the junction. Explain the variation of depletion region in forward and reverse-biased condition.

Draw and explain the current -voltage (I-V) characteristic curves of a junction diode in forward and reverse bias.

For transistor action,which of the following statements are correct : (a) Base, emitter and collector regions should have similar size and doping concentrations. (b) The base region must be very thin and lightly doped. (c ) The emitter junction is forward biased and collector junction is reverser biased. (d) Both the emitter junction as well as the collector junction are forward baised.

AAKASH SERIES-SEMICONDUCTOR DEVICES-EXERCISE -I (P-N JUNCTION DIODE)
  1. When p-n junction diode is forward biased

    Text Solution

    |

  2. Which of the following statement is not correct when a junction diode ...

    Text Solution

    |

  3. The resistance of an ideal diode in forward biased condition is

    Text Solution

    |

  4. The resistance of an ideal diode in reverse biased condition is

    Text Solution

    |

  5. In forward biased condition, the p-n junction diode behaves as

    Text Solution

    |

  6. Reverse bias applied to a junction diode

    Text Solution

    |

  7. In the middle of the depletion layer of a reverse biased p-n junction,...

    Text Solution

    |

  8. Avalanche breakdown in a semiconductor diode occurs when

    Text Solution

    |

  9. When a P-n junction diode is reverse biased the flow of current across...

    Text Solution

    |

  10. The small currents in reverse biased condition of p-n diode are due to

    Text Solution

    |

  11. A P-n junction diode can be used as

    Text Solution

    |

  12. A diode as a rectifier converts

    Text Solution

    |

  13. In half-wave rectifier, maximum percentage of A.C. power that can be c...

    Text Solution

    |

  14. In a half-wave rectifier, the load current flows for

    Text Solution

    |

  15. Maximum efficiency of a full-wave rectifier is

    Text Solution

    |

  16. In a full-wave rectifier, the load current flows for

    Text Solution

    |

  17. Zener breakdown occurs

    Text Solution

    |

  18. At breakdown region of a Zener diode, which of the following does not ...

    Text Solution

    |

  19. Zener diode can be used

    Text Solution

    |

  20. In an unbiased n-p junction electrons diffuse from n-region to p-regio...

    Text Solution

    |