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Of the following statements about a p-n-...

Of the following statements about a p-n-p transistor, which is correct?

A

The semi conductor material used to make the emitter may have been doped with arsenic

B

Most of the current carriers in the collector and emitter are holes from donor impurities

C

The emitter junction is forward biased

D

Both 2 and 3

Text Solution

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The correct Answer is:
D
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AAKASH SERIES-SEMICONDUCTOR DEVICES-EXERCISE -I (TRANSISTORS)
  1. A n-p-n transistor is said to be in active region of operation, when

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  2. n-P-n transistors are preferred to P-n-p transistors because

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  3. In n-P-n transistor the P-type crystal acts as

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  4. A n-p-n transistor conducts when

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  5. In an NPN transistor, the emitter current is

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  6. In the circuit symbol of transistor the arrow on the emitter indicates

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  7. When n-P-n transistor is used as an amplifier

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  8. An n-p-n transistor is biased to work as an amplifier, which of the fo...

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  9. Of the following statements about a p-n-p transistor, which is correct...

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  10. In CE configuration transistor, the current gain

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  11. The relation between alpha and beta with usual notation is

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  12. The following configuration having the highest voltage gain is,

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  13. Transistor input characteristics curves are the graphs drawn with

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  14. Transistor output characteristic curves are the graphs drawn with

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  15. An n-p-n transistor power amplifier in C.E configuration gives

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  16. Consider a p-n junction as a capacitor, formed with p and n - material...

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  17. In a common base amplifier, the phase difference between the input sig...

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  18. For a transistor amplifier, the voltage gain

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  19. An electrical device which offers a low resistance to the current in o...

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  20. For a transistor to work as an amplifier

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