Home
Class 12
PHYSICS
In p-n junction, having depletion layer ...

In p-n junction, having depletion layer of thickness `2 ×10^(-6)m` the potential difference across it is 0.2 V. The electric field is

A

`10^6V/m`

B

`4×10^5V/m`

C

`10^5V/m`

D

`10^(-5)V/m`

Text Solution

AI Generated Solution

The correct Answer is:
To find the electric field (E) in a p-n junction with a given depletion layer thickness and potential difference, we can use the relationship between electric field, potential difference, and distance. The formula is given by: \[ E = \frac{V}{D} \] Where: - \( E \) is the electric field (in volts per meter, V/m), - \( V \) is the potential difference (in volts, V), - \( D \) is the thickness of the depletion layer (in meters, m). ### Step-by-Step Solution: 1. **Identify the Given Values:** - Thickness of the depletion layer, \( D = 2 \times 10^{-6} \, m \) - Potential difference, \( V = 0.2 \, V \) 2. **Substitute the Values into the Formula:** \[ E = \frac{V}{D} = \frac{0.2 \, V}{2 \times 10^{-6} \, m} \] 3. **Calculate the Electric Field:** - First, calculate the denominator: \[ 2 \times 10^{-6} = 0.000002 \, m \] - Now perform the division: \[ E = \frac{0.2}{2 \times 10^{-6}} = \frac{0.2}{0.000002} = 100000 \, V/m \] 4. **Express the Result in Scientific Notation:** \[ E = 1 \times 10^{5} \, V/m \] ### Final Answer: The electric field across the depletion layer in the p-n junction is \( 1 \times 10^{5} \, V/m \). ---
Promotional Banner

Topper's Solved these Questions

  • Mock Test 38: PHYSICS

    AAKASH INSTITUTE|Exercise Example|30 Videos
  • MOCK TEST 4

    AAKASH INSTITUTE|Exercise Example|33 Videos

Similar Questions

Explore conceptually related problems

In a p-n junction having depletion layer of thickness 10^(-6) m the potential across it is 0.3 V . Then the electric field is Hint = E= V/d

In a p-n junction diode having depletion layer of thickness 10^(-6)m , the potential across it is 0.1V . The electric field produced is

In a p-n junction, the thickness of the depletion layer is 10^(-6) m. If the potential difference across it is 0.2 V, then the electric field set up across the junction is

In an unbiased p-n junction diode the thickness of the deplection layer is 7xx10^(-6) m and the potential barrier is 0.7 V . The electric field in this region is

In a p-n junction, the thickness of depletion region is 2xx10^(-7)m and potential barrier across the junction is 0.20 V (a) What will be the intensity of electric field in this region ? (b) if an electron, from n-side approaches the p-n junction with speed 5xx10^(5) m//s . then with what speed it will enter the p-side ?

In a p-n junction diode the thickness of deplection layer is 2 xx 10^(-6) m and barrier potential is 0.3 V . The intensity of the electrical field at the junction is.

In a p-n junction depletion region has a thickness of the order of

AAKASH INSTITUTE-Mock Test 39: PHYSICS-Example
  1. Annihilation of 1g of matter theoretically yield energy of the order o...

    Text Solution

    |

  2. The law of conservation of mass is not obeyed by a

    Text Solution

    |

  3. What percentage (approximate) of original radioactive substance left a...

    Text Solution

    |

  4. If the nuclear of radius of O^8 is 2.4 fermi, then radius of Al^27 wou...

    Text Solution

    |

  5. The incorrect feature of nuclear forces among following is

    Text Solution

    |

  6. The t(0.5) of a radioactive element is related to its average life by ...

    Text Solution

    |

  7. The unit of radioactivity decay rate is

    Text Solution

    |

  8. The quark content of proton and neutron are respectively

    Text Solution

    |

  9. If M,mn and mp are masses (in kg) of nucleus Xz^A, neutron and proton ...

    Text Solution

    |

  10. A pure semiconductors

    Text Solution

    |

  11. In a p-n junction diode, holes diffuse from p-region to n- region beca...

    Text Solution

    |

  12. The total number of current careers in intrinsic semiconductor of dime...

    Text Solution

    |

  13. Symbolic representation of photodiode is

    Text Solution

    |

  14. The correct energy band responsible of intrinsic semiconductor at temp...

    Text Solution

    |

  15. The correct statement among the following is/are

    Text Solution

    |

  16. In p-n junction, having depletion layer of thickness 2 ×10^(-6)m the p...

    Text Solution

    |

  17. A N - type semiconductor is

    Text Solution

    |

  18. The current through 2 Omega resistor is(diodes are considered as ideal...

    Text Solution

    |

  19. If ni, ne and nh represents the number of intrinsic charge carrier, nu...

    Text Solution

    |

  20. The cut-in voltage of a germanium diode is approximately equal to

    Text Solution

    |