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a n-type semiconductor is formed...

a n-type semiconductor is formed

A

when germanium crystal is doped with an impurity containing three valence electrons

B

when germanium crystal is doped with an imopurity containing five valencelectrons

C

from pure germanium

D

from pure silicon

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TARGET PUBLICATION-SEMICONDUCTORS-EXERCISE
  1. which of the foll. Is NOT a 'donor' impurity?

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  2. Pure silicon should be doped with which of the foll. Impurity atoms to...

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  3. a n-type semiconductor is formed

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  4. Regarding p-type and n-type semiconductors,which of the foll..statemen...

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  5. a semiconductor is damaged by a strong current ,because of

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  6. bond in n and p type semiconductor is

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  7. in germanium crystal.a hole is provided by aimpurity.

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  8. on doping germanium metal with a little amount of indium, one gets

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  9. doping materials are caled impurities because

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  10. a hole in a semiconductcorr is rather diff. from an electron because i...

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  11. suitable impurities are added to a semiconductor depending on its use....

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  12. The donor atoms have energy level

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  13. The diode is called an electronic valve since

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  14. in a semiconductor diode, the abrrier potential offers opposition to ...

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  15. in a p -n junction , there is no appreciable current if

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  16. The potential barrier developed in a junction diode opposes

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  17. when a p junction dioode is forward biased, the flow of cufrent across...

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  18. in p-n junction diode, holesdiffuse from p-region to n-region because

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  19. Depletion layer in the P-N junction is caused by

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  20. The potential difference developed across the junction due to migratio...

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