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let np and ne be the no. oh holes and c...

let `n_p` and `n_e` be the no. oh holes and conduction electrons in a semicondutcor . Then,

A

`n_pgtn_e`in an intrinsic semiconductor

B

`n_p=n_e`in an extrinsic semiconductor

C

`n_p=n_e`in an intrinsic semiconductor

D

`n_pgtn_e`in an intrinsic semiconductor

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TARGET PUBLICATION-SEMICONDUCTORS-EXERCISE
  1. in a semiconductor,

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  2. In an intrinsic semiconductor

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  3. let np and ne be the no. oh holes and conduction electrons in a semic...

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  4. resistivity of pure geramanium crystal at room temperature in order of

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  5. in a pure silicon (ni = (10^16)/m^3) crystal at 300 k ,10^21 atoms of ...

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  6. to a germanium sample , trace sof gallium are added as an imourity. Th...

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  7. when phosphorous and antimony are mixed in germanium , then

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  8. Intrinsic semiconductor is electrically neutral. Extrinsic semiconduct...

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  9. Germanium and Silicon belong to the 14th group of periodic table. Henc...

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  10. After Doping , resistivity of a semiconductor

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  11. the electrical conductivity of a p-type semiconductor is determined by...

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  12. In Extrinsic Semiconductors

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  13. The majority charge carriers in P-type semiconductors are

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  14. a p-type semiconductor can be obtained by adding

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  15. if ne aand nh are the no. of electrrons and holes in a semiconductor h...

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  16. when n-type of semiconductor is heated

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  17. A diode converts A.C. voltage into a /an

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  18. the order of thickness of delpting region in p-n junction is

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  19. p-n junction diode works as an insulator , if connected

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  20. in a semiconductor diode, a p-side is earthed and n-side is applied a...

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