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in a pure silicon (ni = (10^16)/m^3) cry...

in a pure silicon (`n_i = (10^16)/m^3) crystal at 300 k ,`10^21` atoms of phosphorous are added percubic meter. The new hole concetaration wil be.

A

`10^21 per m^3`

B

`10^19 per m^3`

C

`10^11 per m^3`

D

`10^5 per m^3`

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TARGET PUBLICATION-SEMICONDUCTORS-EXERCISE
  1. let np and ne be the no. oh holes and conduction electrons in a semic...

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  2. resistivity of pure geramanium crystal at room temperature in order of

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  3. in a pure silicon (ni = (10^16)/m^3) crystal at 300 k ,10^21 atoms of ...

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  4. to a germanium sample , trace sof gallium are added as an imourity. Th...

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  5. when phosphorous and antimony are mixed in germanium , then

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  6. Intrinsic semiconductor is electrically neutral. Extrinsic semiconduct...

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  7. Germanium and Silicon belong to the 14th group of periodic table. Henc...

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  8. After Doping , resistivity of a semiconductor

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  9. the electrical conductivity of a p-type semiconductor is determined by...

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  10. In Extrinsic Semiconductors

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  11. The majority charge carriers in P-type semiconductors are

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  12. a p-type semiconductor can be obtained by adding

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  13. if ne aand nh are the no. of electrrons and holes in a semiconductor h...

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  14. when n-type of semiconductor is heated

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  15. A diode converts A.C. voltage into a /an

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  16. the order of thickness of delpting region in p-n junction is

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  17. p-n junction diode works as an insulator , if connected

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  18. in a semiconductor diode, a p-side is earthed and n-side is applied a...

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  19. figure shows ttwo p-n junction diodes alond with aresistance R and a d...

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  20. in the foll. Circuit of PN junction , diodes D1, D2 and D3 are ideal t...

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