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in a semiconductor diode, a p-side is ea...

in a semiconductor diode, a p-side is earthed and n-side is applied a potential of -2V , the diode will

A

conduct

B

not conduct

C

conduct partially

D

breakdown

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TARGET PUBLICATION-SEMICONDUCTORS-EXERCISE
  1. the order of thickness of delpting region in p-n junction is

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  2. p-n junction diode works as an insulator , if connected

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  3. in a semiconductor diode, a p-side is earthed and n-side is applied a...

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  4. figure shows ttwo p-n junction diodes alond with aresistance R and a d...

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  5. in the foll. Circuit of PN junction , diodes D1, D2 and D3 are ideal t...

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  6. OF THE DIODES SHOWN IN the foll. Diagrams, which one is reverse biased...

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  7. a semiconductorX is made by doping a germanium crytsal with arsenic (z...

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  8. the dominant mecahnisms for motion of chargecarriers in forward and re...

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  9. serious draback of the semiconductors devices is

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  10. in LED, to avoid damage to the diode is used

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  11. in LED, intensity of emitted light

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  12. which of the foll. Is NOT an appliction of photodiode?

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  13. in a p-n junction photo cell, the value of photo-electromotive force p...

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  14. Assertion :light emitting diode (LED) emits spontaneous radiation reas...

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  15. thermistors may have

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  16. which of the foll. Graphs represents NTC thermistors

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  17. the circuit has two oppositely connected ideal diodes in parallel. Wha...

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  18. a p-n junction diode when forward biased has a drop of 0.4 V which is ...

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  19. for a photodiode , the forbidden energy gap (E8)of the material used i...

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  20. if the band gap between valence band and conduction band in a matereia...

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