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the dominant mecahnisms for motion of ch...

the dominant mecahnisms for motion of chargecarriers in forward and reverse biased silicon p-n junctions are

A

drift in forward bias, diffusion in reverse bias

B

diffusion in forward bias, drift in re verse bias

C

diffusion I both forward and reverse bais

D

drift in both forward and reverse bias

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TARGET PUBLICATION-SEMICONDUCTORS-EXERCISE
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  13. a p-n junction diode when forward biased has a drop of 0.4 V which is ...

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