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in a p-n junction photo cell, the value ...

in a p-n junction photo cell, the value of photo-electromotive force produced by monochromatic light is proportional to

A

the voltage applies at the p-n junction

B

the b arrier voltage at the p-n junction

C

the intyensity of the light falling on the cell

D

the frequency of the light falling on thecell

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TARGET PUBLICATION-SEMICONDUCTORS-EXERCISE
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  6. which of the foll. Graphs represents NTC thermistors

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  8. a p-n junction diode when forward biased has a drop of 0.4 V which is ...

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  9. for a photodiode , the forbidden energy gap (E8)of the material used i...

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  10. if the band gap between valence band and conduction band in a matereia...

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  11. in insulatore (C.B. is conduction band and V.B. is a valence band)

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  12. the energy gap in case of which of the foll. Is less than 3eV?

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  13. the band gap of an insulator , conductor and semic conductor are E(gI)...

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  14. C and Si bot have same lattice structure , having bomnding electrons ...

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  15. the density of an electron-hole pair in a pure germanium is3 ×10^(16)m...

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  16. a semiconductor has equal electron and hole concetration of2x10^8 m^(-...

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  17. in an n - type semiconductor, which of the foll.statement is true ?

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  18. in n type semiconductor , electrons are majority charge carriers but i...

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  19. the barrier potential of p-n junction depends on : a.type of semicond...

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  20. with forwardf biased mode, the p-n junction diode.

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