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a p-n junction diode when forward biased...

a p-n junction diode when forward biased has a drop of 0.4 V which is assumed to be independent of currebnt A. a current excess of 10mA through the diode damages (burns) the diode .if we want to use a 2 V battrey to forwqard bias the diode, what should be the avlue of resistor used in series with the diode so thatthe maximum current does NOT exced 5mA?

A

160`omega`

B

260`omega`

C

390`omega`

D

520`omega`

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TARGET PUBLICATION-SEMICONDUCTORS-EXERCISE
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  2. the circuit has two oppositely connected ideal diodes in parallel. Wha...

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  3. a p-n junction diode when forward biased has a drop of 0.4 V which is ...

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  4. for a photodiode , the forbidden energy gap (E8)of the material used i...

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  5. if the band gap between valence band and conduction band in a matereia...

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  6. in insulatore (C.B. is conduction band and V.B. is a valence band)

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  7. the energy gap in case of which of the foll. Is less than 3eV?

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  8. the band gap of an insulator , conductor and semic conductor are E(gI)...

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  11. a semiconductor has equal electron and hole concetration of2x10^8 m^(-...

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  12. in an n - type semiconductor, which of the foll.statement is true ?

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  13. in n type semiconductor , electrons are majority charge carriers but i...

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  14. the barrier potential of p-n junction depends on : a.type of semicond...

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  15. with forwardf biased mode, the p-n junction diode.

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  16. the forward biased diode connection is

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  17. whicch one of the foll. Represents reverse bias diode?

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  18. p-n junction diods are arranged as shown in the figures (A and B). Ide...

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  19. pick out the statement which is not CORRECT

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  20. aplication of a forward bias to a p-n junction

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