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for a photodiode , the forbidden energy ...

for a photodiode , the forbidden energy gap` (E_8)`of the material used is 2.8eV and wavelength of radiations (`lambda`) incident on it is 5780 A. then the emission of electrons is possible when incident radiation have

A

`lambda `=5780A

B

`lambda` lt5780A

C

`lambda`gt5780 A

D

none of these

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TARGET PUBLICATION-SEMICONDUCTORS-EXERCISE
  1. the circuit has two oppositely connected ideal diodes in parallel. Wha...

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  2. a p-n junction diode when forward biased has a drop of 0.4 V which is ...

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  3. for a photodiode , the forbidden energy gap (E8)of the material used i...

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  4. if the band gap between valence band and conduction band in a matereia...

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  5. in insulatore (C.B. is conduction band and V.B. is a valence band)

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  6. the energy gap in case of which of the foll. Is less than 3eV?

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  7. the band gap of an insulator , conductor and semic conductor are E(gI)...

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  8. C and Si bot have same lattice structure , having bomnding electrons ...

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  9. the density of an electron-hole pair in a pure germanium is3 ×10^(16)m...

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  10. a semiconductor has equal electron and hole concetration of2x10^8 m^(-...

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  11. in an n - type semiconductor, which of the foll.statement is true ?

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  12. in n type semiconductor , electrons are majority charge carriers but i...

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  13. the barrier potential of p-n junction depends on : a.type of semicond...

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  14. with forwardf biased mode, the p-n junction diode.

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  15. the forward biased diode connection is

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  16. whicch one of the foll. Represents reverse bias diode?

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  17. p-n junction diods are arranged as shown in the figures (A and B). Ide...

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  18. pick out the statement which is not CORRECT

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  19. aplication of a forward bias to a p-n junction

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  20. the change in curtrent through a junction diode is 1.2mA when the forw...

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