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aplication of a forward bias to a p-n j...

aplication of a forward bias to a p-n junction

A

increases the no. of donors on the n- side

B

increases the electric field in the depletion zone

C

increases the potential diff. across the depletion zone

D

widens the depletion zone

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TARGET PUBLICATION-SEMICONDUCTORS-EXERCISE
  1. p-n junction diods are arranged as shown in the figures (A and B). Ide...

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  2. pick out the statement which is not CORRECT

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  3. aplication of a forward bias to a p-n junction

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  4. the change in curtrent through a junction diode is 1.2mA when the forw...

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  5. consider the junction diode as ideal. The value of current flowin g th...

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  6. In the figure shown, if the diode forward voltage drop is 0.2V, the vo...

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  7. assume that even each diode shown in the figure has a forward basis r...

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  8. for the current shiown in the figure . The equivalent resistance betwe...

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  9. the given circuit has two ideal diodes connected as shown in the figur...

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  10. the reading of the ammeter for a silicon diode in the given circuit is...

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  11. when a semiconductor device is connected in series with a battery and ...

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  12. if in a p-n junction , a square input signal of 10 V is applied as sh...

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  13. in a p-n junction diode, change in temperature due to heating

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  14. Photodiode is a device

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  15. The schematic symbol of Light Emitting Diode (LED) is

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  16. The given graph represents V-I characteristics for a semiconductor dev...

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  17. A wire of aluminum and a wire of germanium are cooled to a temperature...

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  18. which of the foll. Statement is not true?

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  19. In Gallium Arsenide material, Ohm's law does not hold good because

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  20. An LED is constructed from a p-n junction based on a certain semi cond...

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