A pure silicon crystal at temperature of 300K has electron and hole concentration `1.5 xx 10^16 m^-3` each `(n_c =n_h)`. Doping by indium increase `(n_e = n_h)` to `4.5 xx 10^22 m^-3`. Calculate `n_e` for the doped silicon crystal.

a semiconductor has equal electron and hole concetration of 2x10^8 m^(-3) . On doping with a certain impurity, the electron concentration increases to 4x10^(10)m^(-3) , then the new hole concentration of the semiconductor is

A pure silicon crystal has 4 xx 10^28 atoms m^-3 . It is droped by 1ppm concentration of antimony. Calculate the number of electrons and holes n_i = 1.2 xx 10^16//m^3

the no. densities of electrons and holes in a pure germanium at room temperature are equal and its value is 2×10^(16) per m^3 . On doping with aluminium the hole density increases to 3.5×10^(22) per m^3 then the electron density in dppoed germanium is

the density of an electron-hole pair in a pure germanium is 3 ×10^(16)m^(-3) at room temperature. On doping with aluminium , the hole density increses to 4.5×10^(22)m^(-3) .now the electron density (in m^(-3) )in doped germanium will be

A metal cube of side 1m is subjected to a force. The force acts normally on the whole surface of cube and its volume changes by 1.5 xx 10^(-5) m^3 . The bulk modulus of metal is 6.6 xx 10^10 N//m^2 . Calculate the change in pressure.

A metal cube of side 1 m is subjected to a force. The force acts normally on the whole surface of a cube and its volume changes by 1.5 xx 10^-5 m^3 . The bulk modulus of the metal is 6.6 xx 10^10 N//m^2 . Calculate change in pressure.

A wire of length 10 m and area 0.625 xx 10^-4 m^3 is subjected to a load of 1.25 kg (1 kg wt = 9.8 N). The elongations produced in the wire is 0.5 xx 10^-4m . Calculate young's Modulus of the material.

A metal cube of side lm is subjected to a force. The force acts normally on the whole surface of cube and its volume changes by 1.5 xx 10^-5m^3 . The bulk modulus of metal is 8 xx 10^10 N//m^2 . Calculate the change in pressure.