An intrinsic semiconductor has `10^8 m^-3` free electrons and is doped with pentavalent impurity atoms of density `10^24 m^-3`. The free electron density will increase by ........ orders of magnitude.

The number density of free electrons in the semiconductor is 10^18 m^-3. It is doped with a pentavalent impurity atoms of number density 10^24 m^-3 . The number density of free electrons m^-3 increases by a factor of

In the n -type semiconductor the number density of free electrons is of the order of :

The density of an electron - hole pair in a pure germanium is 3xx10^(-16) m^(-3) at room temperature. On doping with aluminium , the hole density increase to 4.5xx10^(22) m^(-3) Now the electron density ( in m ) in doped germanium will be

The intrinsic number density of charge carriers in a semiconductor is 2.5 xx 10^13 cm^-3 . It is doped with donor atoms of number density 1.25 xx 10^17cm^-3 , the ratio of conductivities of doped and intrinsic semiconductors is

Aconductor wire having 10^29 free el ectrons//m a current of 20A. If the cross-section of the 1 mm^2 , then the drift velocity of electrons will be

A semiconductor is known to have an electron concentration of 8 xx 10^13 cm^-3 and hole concentration of 5 xx 10^12 cm^-3 . The semiconductor is

The number densities of electrons and holes in pure silicon are 1.5 xx 10^16m^-3 . On doping with indium, the hole density becomes 4.5 xx 10^22 m^-3 , the electron density is

The number densities of electrons and holes in an extrinsic semiconductor are 8 xx 10^13 cm^-3 and 5 xx 10^12cm^-3 respectively and their respective mobilities are : 23 xx 10^3cm^2//Vs and 10^2cm^2//Vs . The conductivity of the semiconductor is

A neutral atom has 2 k electrons, 8 L electrons and 8 M electrons.Predict from this,calculate: its atomic number