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The Bohr radius of the fifth Valence ele...

The Bohr radius of the fifth Valence electron of phosphorous atom (atomic number = 15) acting as a dopant in silicon (relative dielectric constant = 12) is …….. Å

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To find the Bohr radius of the fifth valence electron of a phosphorus atom acting as a dopant in silicon, we can follow these steps: ### Step-by-Step Solution: 1. **Identify the Given Values:** - Atomic number of phosphorus (Z) = 15 - Relative dielectric constant of silicon (ε_r) = 12 - The Bohr radius (r₀) = 0.53 Å (angstroms) 2. **Determine the Principal Quantum Number (n):** - The electronic configuration of phosphorus is 1s² 2s² 2p⁶ 3s² 3p³. - The valence electrons are in the outermost shell, which is n = 3. 3. **Use the Formula for Bohr Radius in a Medium:** The formula for the modified Bohr radius (r_n) in a medium with dielectric constant is given by: \[ r_n = \frac{\epsilon_r \cdot n^2}{Z} \cdot r_0 \] where: - \( r_n \) = Bohr radius in the medium - \( \epsilon_r \) = relative dielectric constant - \( n \) = principal quantum number - \( Z \) = atomic number - \( r_0 \) = Bohr radius in vacuum (0.53 Å) 4. **Substitute the Values into the Formula:** - Substitute \( \epsilon_r = 12 \), \( n = 3 \), \( Z = 15 \), and \( r_0 = 0.53 \) Å into the formula: \[ r_n = \frac{12 \cdot 3^2}{15} \cdot 0.53 \] 5. **Calculate \( n^2 \):** - \( n^2 = 3^2 = 9 \) 6. **Calculate the Radius:** \[ r_n = \frac{12 \cdot 9}{15} \cdot 0.53 \] \[ r_n = \frac{108}{15} \cdot 0.53 \] \[ r_n = 7.2 \cdot 0.53 \] \[ r_n = 3.816 \text{ Å} \] 7. **Final Result:** - The Bohr radius of the fifth valence electron of the phosphorus atom in silicon is approximately **3.81 Å**.

To find the Bohr radius of the fifth valence electron of a phosphorus atom acting as a dopant in silicon, we can follow these steps: ### Step-by-Step Solution: 1. **Identify the Given Values:** - Atomic number of phosphorus (Z) = 15 - Relative dielectric constant of silicon (ε_r) = 12 - The Bohr radius (r₀) = 0.53 Å (angstroms) ...
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Doping mens introduction of small amount of impurities like phosphorus , arsenic or boron into the pure crystal . In pure silicon , ther are four valenices used in bonding with other four adjacent silicon crystal is doped with a group -15 element ( with five valence electron ) such as P, As , or Bi , the structure of the crystal lattic remains unchanged . Out of the five valence electron of group -15 doped element four element are used in normal covalent bonding with silicon while fiffth electron is delcoasiled and thus conducts electricity Doping a silicon crystal with a group -13 element (with three valence electrons ) such as B, Al, Ga or In products a semiconductor with three electrons in in dopant . The place where fourth electron is missing is called an electron vacancy or hole . Such hole can move throught the crystal like a positive charge giving rise conduction of electricity. No. of valene electrons in silicon are :