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To get n-type doped semiconductor, impur...

To get `n`-type doped semiconductor, impurity to be added to silicon should have the following number of valence electrons

A

2

B

6

C

3

D

1

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The correct Answer is:
B
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AAKASH INSTITUTE ENGLISH-THE SOLID STATE -ASSIGNMENT SECTION-A (OBJECTIVE)
  1. The interatomic distance for bcc crystal is

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  2. The cubic unit cell of a metal (molar mass= 63.55 g"mol"^(-1)) has an ...

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  3. CsBr crystallises in a body centred cubic lattice. The unit cell lengt...

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  4. In the crystals of which of the following ionic compounds would you ex...

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  5. Lithium forms body centred cubic structure. The length of the side of ...

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  6. Coordinating number of Na^(+) in NaCl is

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  7. Body -centred cubic lattice has a corrdination number of

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  8. When molten zinc is cooled to solid state, it assumes hcp structure. T...

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  9. The unit cell of a binary compound of A and B has ccp structure with A...

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  10. Which of the following unit cell is not possible for monoclinic crysta...

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  11. Which defect causes decreases in the density of crystal?

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  12. Schottky defect occurs mainly in electrovalent compounds where

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  13. Which one of the following is the correct statement ?

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  14. Silver halides generally show

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  15. Doping silicon with boron produces a -

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  16. What type of crystal defect is shown in the figure given below ? {:(...

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  17. The pyknometric density of sodium chloride crystal is 2.165xx10^(3)" k...

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  18. The non-stoichiometric compound Fe0.94O is formed when some Fe^(+2) io...

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  19. To get n-type doped semiconductor, impurity to be added to silicon sho...

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  20. A binary solid (A^(+)B^(+)) has a rock sell structure .If the edge len...

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