Statement-1:p-type semiconductor are good conductor of electricity due to metal excess defect.
Statement-2: F-centres are created due to metal excess defect.

Options

A. Statement-1 is true, statement-2 is true, statement-2 is a correct explanation for statement-1
B. Statement-1 is true, statement-2 is true, statement-2 is not correct explanation for statement-1
C. Statement-1 is true, statement-2 is false
D. Statement-1 is false, statement-2 is true

Answer

To analyze the statements provided in the question, we need to understand the concepts of p-type semiconductors and F-centers.

### Step-by-Step Solution:

1. **Understanding p-type Semiconductors**:
- P-type semiconductors are formed when a pure semiconductor (like silicon) is doped with trivalent impurities (elements with three valence electrons) such as boron, aluminum, or gallium.
- The doping process creates "holes" (positive charge carriers) in the semiconductor. These holes allow for the conduction of electricity.

**Hint**: Remember that p-type semiconductors are associated with holes created by trivalent dopants.

2. **Analyzing Statement 1**:
- The first statement claims that "p-type semiconductors are good conductors of electricity due to metal excess defect."
- This statement is **false**. P-type semiconductors conduct electricity primarily due to the presence of holes, not due to metal excess defects. Metal excess defects are associated with n-type semiconductors.

**Hint**: Focus on the role of holes in p-type semiconductors rather than metal excess defects.

3. **Understanding F-centers**:
- F-centers are defects in ionic crystals (like NaCl) that occur when an anion (like Cl-) is missing from the lattice, creating a vacancy that can trap an electron. This results in the formation of an F-center.
- F-centers contribute to the electrical conductivity of the material by providing free electrons.

**Hint**: Recall that F-centers are related to anionic vacancies and are not directly linked to p-type or n-type semiconductors.

4. **Analyzing Statement 2**:
- The second statement claims that "F-centers are created due to metal excess defect."
- This statement is **true**. F-centers are indeed created as a result of metal excess defects, where additional metal ions (like Na+) are introduced into the crystal lattice, leading to the formation of electron vacancies.

**Hint**: Connect F-centers with the concept of metal excess defects in ionic solids.

5. **Conclusion**:
- Since the first statement is false and the second statement is true, the correct answer is:
- Statement 1: False
- Statement 2: True

**Final Answer**: The answer is (D): Statement 1 is false, Statement 2 is true.