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Pure Si at 300 K has equal electron (ne)...

Pure Si at 300 K has equal electron `(n_e)` and hole `(n_(h))` concentration of `2.xx10^(16)` per `m^(3)`. Doping by indium increases `n_(h)` to `4xx10^(22) ` per `m^(3)`. Calculate `n_(e)` in the doped silicon.

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To solve the problem, we will use the relationship between the electron concentration \( n_e \), hole concentration \( n_h \), and intrinsic carrier concentration \( n_i \) in a semiconductor. ### Step-by-step Solution: 1. **Identify Given Values:** - Initial electron concentration \( n_e = 2 \times 10^{16} \, \text{m}^{-3} \) - Initial hole concentration \( n_h = 2 \times 10^{16} \, \text{m}^{-3} \) (since it is pure silicon) - Doped hole concentration \( n_h' = 4 \times 10^{22} \, \text{m}^{-3} \) ...
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