Home
Class 12
PHYSICS
A p-n photodiode is made of a material w...

A p-n photodiode is made of a material with a band gap of 2 e V. The minimum frequency of the radiation that can be absorbed by the material is nearly
(hc= 1240 eV nm)

Text Solution

Verified by Experts

Use frequency E=hf
`:. f=E/h =(2xx1.6xx10^(-19)J)/(6.6xx10^(-34)J-s)~~5xx10^(14) Hz`
Promotional Banner

Topper's Solved these Questions

  • SEMICONDUCTOR ELECTRONICS: MATERIALS, DEVICES AND SIMPLE CIRCUITS

    AAKASH INSTITUTE ENGLISH|Exercise Try yourself|20 Videos

  • SEMICONDUCTOR ELECTRONICS: MATERIALS, DEVICES AND SIMPLE CIRCUITS

    AAKASH INSTITUTE ENGLISH|Exercise Assignment (Section -A (Objective Type question (One option is correct))|50 Videos

  • SEMICONDUCTOR ELECTRONICS (MATERIAL, DEVICES AND SIMPLE CIRUITS )

    AAKASH INSTITUTE ENGLISH|Exercise Assignment SECTION - D (Assertion & reason type Question)|10 Videos

  • SYSTEM OF PARTICLES AND ROTATIONAL MOTION

    AAKASH INSTITUTE ENGLISH|Exercise Try Yourself|63 Videos

Similar Questions

Explore conceptually related problems

A p-n photodiode is made of a material with a band gap of 1 e V. The minimum frequency of the radiation that can be absorbed by the material is nearly (hc= 1240 eV nm)

A p-n photodiode is made of a material with a band gap of 2.0 eV . The minimum frequency of the radiation that can be absorbed by the material is nearly

A p-n photodiode is made of a material with a band gap of 3.0 eV . The minimum frequency of the radiation that can be absorbed by the material is nearly

A p-n photodiode is fabricated from a semiconductor with a band gap of 2.5 eV . It can detect a signal of wavelength

A p-n photodiode is fabricated from a semiconductor with band - gap of 2.8 eV . Can it detect a wavelength of 6000nm?

A p-n junction is fabricated from a semiconductor with band gap of 2.8eV . Can it detect a wavelength of 6000nm ?

The work function of a surface of a photosensitive material is 6.2 eV . The wavelength of the incident radiation for which the stopping potential is 5 V lies in the

A heated body maitained at T K emits thermal radiation of total energy E with a maximum intensity at frequency v. The emissivity of the material is 0.5. If the temperature of the body be increased and maintained at temperature 3T K, then :- (i) The maximum intensity of the emitted radiation will occur at frequency v/3 (ii) The maximum intensity of the emitted radiation will occur at frequency 3v. (iii) The total energy of emitted radiation will become 81 E (iv) The total energy of emitted radiation will become 27 E

A stress of 10^(6) N//m^(2) is required for breaking a material. If the density of the material is 3 xx 10^(3) Kg//m^(3) , then what should be the minimum length of the wire made of the same material so that it breaks by its own weight (g = 10m//s^(2))

A wire of length 2L , is made by joining two wires A and B of same length but different radii r and 2r and made of the same material. It is vibrating at a frequency such that the joint of the two wires forms a node. If the number of antionodes in wire A is P and that in B is q then the ratio p:q is: