Home
Class 12
PHYSICS
Mobilities of electrons and holes for an...

Mobilities of electrons and holes for an intrinsic silicon is `0.64m^(2)V^(-1)S^(-1)` and 0.36 `m^(2)V^(-1)s^(-1)` respectively. If the electron and hole densities are equal to `1.6xx10^(19) m^(-3)`. What is the conductivity of silicon ?

Text Solution

AI Generated Solution

To find the conductivity of intrinsic silicon, we can use the formula: \[ \sigma = q \cdot (n \cdot \mu_e + p \cdot \mu_h) \] Where: - \(\sigma\) is the conductivity, ...
Promotional Banner

Topper's Solved these Questions

  • SEMICONDUCTOR ELECTRONICS: MATERIALS, DEVICES AND SIMPLE CIRCUITS

    AAKASH INSTITUTE ENGLISH|Exercise Try yourself|20 Videos
  • SEMICONDUCTOR ELECTRONICS: MATERIALS, DEVICES AND SIMPLE CIRCUITS

    AAKASH INSTITUTE ENGLISH|Exercise Assignment (Section -A (Objective Type question (One option is correct))|50 Videos
  • SEMICONDUCTOR ELECTRONICS (MATERIAL, DEVICES AND SIMPLE CIRUITS )

    AAKASH INSTITUTE ENGLISH|Exercise Assignment SECTION - D (Assertion & reason type Question)|10 Videos
  • SYSTEM OF PARTICLES AND ROTATIONAL MOTION

    AAKASH INSTITUTE ENGLISH|Exercise Try Yourself|63 Videos

Similar Questions

Explore conceptually related problems

Mobilities of electorns and holes in a sample of intrinsic germanium at room temperature are 0.54m^(2)V^(-1)s^(-1) and 0.18m^(2)V^(-1)s^(-1) respectively. If the electron and hole densities are equal to 3.6xx10^(19)m^(-3) calculate the germanium conductivity.

Mobilities of electrons and holes in a sample of intrinsic germanium at room temperature are 0.36 m^(2)//Vs and 0.17 m^(2)//Vs . The electron and hole densities are each equal to 2.5 xx 10^(19) m^(-3) . The electrical conductivity of germanium is.

If resistivity of pure silicon is 3000 Omega meter , and the electron and hole mobilities are 0.12 m^(2)V^(-1)s^(-1) and 0.045m^(2)V^(-1)s^(-1) respectively, determine the resistivity of a specimen of the material when 10^(19) atoms of phosphorous are added per m^(3) are also added. Given charge on electron =1.6xx10^(-19)C .

The number density of electrons and holes in pure silicon at 27^@ C are equal and its value is 2.0 xx 10^16 m^(-3) . On doping with indium the hole density increases to 4.5xx 10^22 m^(-3) , the electron density in doped silicon is

When 5 V potential difference is applied across a wire of length 0.1 m, the drift speed of electrons is 2.5 xx 10^(-4) ms ^(-1) . If the electron density in the wire is 8 xx 10^(28) m^(-3) , the resistivity of the material is close to :

Determine the mass of an electron if for an electron e/m=1.759 xx 10^(8) Cg^(-1) and e=1.6021 xx 10^(-19)C

A crystal of intrinsic silicon at room temperature has a carrier concentration of 1.6xx10^(16)m^(-3) . If the donor concentration level is 4.8xx10^(20) m^(-3) , then the concentration of holes in the semiconductor is

The density of an electron-hole pair in a pure germanium is 3xx 10^(16) m^(-3) at room temperature. On doping with aluminium, the hole density increases to 4.5 xx 10^(22) m^(-3) . Now the electron density ( in m^(-3)) in doped germanium will be

Specific conductance of 0.1M nitric acid is 6.3xx10^(-2)ohm^(-1)cm^(-1) . The molar conductance of the solution is:

A block of pure silicon at 300 K has a length of 10 cm and an area of 1.0 cm^(2) . A battery of emf 2V is connected across it. The mobility of electron is 0.14 m^(2) v^(-1) S^(-1) and their number density is 1.5 xx 10^(16) m^(-3) . The mobility of holes is 0.05 m^(2) v^(-1) S^(-1) . The electron current is