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A p-n photodiode is made of a material w...

A p-n photodiode is made of a material with a band gap of 2 e V. The minimum frequency of the radiation that can be absorbed by the material is nearly
(hc= 1240 eV nm)

A

`1xx10^(4)Hz`

B

`20xx10^(14)Hz`

C

`10xx10^(14)Hz`

D

`5xx10^(14)Hz`

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Verified by Experts

The correct Answer is:
D
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AAKASH INSTITUTE ENGLISH-SEMICONDUCTOR ELECTRONICS: MATERIALS, DEVICES AND SIMPLE CIRCUITS-Assignment (Section -A (Objective Type question (One option is correct))
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  2. Which circuit will not show current in ammeter ?

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  3. A p-n photodiode is made of a material with a band gap of 2 e V. The m...

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  4. Zener breakdown takes place if

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  5. In the depletion region of an unbiased p-n junction diode there are

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  6. Function of rectifier is

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  7. In a p–n junction photo cell, the value of the photo electromotive for...

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  8. Serious draw back of the semiconductor device is

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  9. The reason of current flow in P-N junction forward biase is

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  10. In the energy band diagram of a material shown below, the open circles...

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  11. An oscillator is nothing but an amplifier with

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  12. When a n-p-n transistor is used as an amplifier, then

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  13. If l(1),l(2),l(3) are the lengths of the emitter, base and collector o...

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  14. A common emitter amplifier gives an output of 3 V for an input of 0.01...

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  15. In a common base amplifier the phase difference the input signal volta...

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  16. In a common emitter amplifier the input signal is applied across

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  17. The concentration of impurities in a transistor is

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  18. In a transistor, the collector current is always · less then the emitt...

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  19. The minimum potential difference between the base and emitter required...

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  20. Which of the following represents NAND gate ?

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