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In a p–n junction photo cell, the value ...

In a p–n junction photo cell, the value of the photo electromotive force produced by monochromatic light is proportional to: -

A

Voltage applied at the p-n junction

B

Barrier voltage at the p-n junction

C

Intensity of light falling on the cell

D

Frequency of light falling on the cell

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The correct Answer is:
C
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AAKASH INSTITUTE ENGLISH-SEMICONDUCTOR ELECTRONICS: MATERIALS, DEVICES AND SIMPLE CIRCUITS-Assignment (Section -A (Objective Type question (One option is correct))
  1. In the depletion region of an unbiased p-n junction diode there are

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  2. Function of rectifier is

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  3. In a p–n junction photo cell, the value of the photo electromotive for...

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  4. Serious draw back of the semiconductor device is

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  5. The reason of current flow in P-N junction forward biase is

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  6. In the energy band diagram of a material shown below, the open circles...

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  7. An oscillator is nothing but an amplifier with

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  8. When a n-p-n transistor is used as an amplifier, then

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  9. If l(1),l(2),l(3) are the lengths of the emitter, base and collector o...

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  10. A common emitter amplifier gives an output of 3 V for an input of 0.01...

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  11. In a common base amplifier the phase difference the input signal volta...

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  12. In a common emitter amplifier the input signal is applied across

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  13. The concentration of impurities in a transistor is

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  14. In a transistor, the collector current is always · less then the emitt...

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  15. The minimum potential difference between the base and emitter required...

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  16. Which of the following represents NAND gate ?

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  17. The circuit is equivalent to

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  18. The output y, when all three inputs are first high and then low, will ...

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  19. A silicon specimen is made into a P-type semiconductor by dopping, on ...

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  20. Consider the junction diode is ideal. The value of current through the...

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