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A silicon specimen is made into a P-type...

A silicon specimen is made into a `P`-type semiconductor by dopping, on an average, one helium atoms per `5xx10^(7)` silicon atoms. If the number density of atoms in the silicon specimen is `5xx10^(28) at om//m^(3)` then the number of acceptor atoms in silicon per cubic centimeter will be

A

`2.5xx10^(30)`

B

`2.5xx10^(35)`

C

`1.0xx10^(13)`

D

`1.0xx10^(15)`

Text Solution

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The correct Answer is:
To solve the problem, we need to determine the number of acceptor atoms (helium atoms) in a silicon specimen per cubic centimeter. Here’s a step-by-step breakdown of the solution: ### Step 1: Understand the Given Data - The number density of silicon atoms is given as \( n_{Si} = 5 \times 10^{28} \, \text{atoms/m}^3 \). - The doping ratio is 1 helium atom for every \( 5 \times 10^7 \) silicon atoms. ### Step 2: Convert the Number Density from \( \text{atoms/m}^3 \) to \( \text{atoms/cm}^3 \) To convert from \( \text{atoms/m}^3 \) to \( \text{atoms/cm}^3 \), we use the conversion factor \( 1 \, \text{m}^3 = 10^6 \, \text{cm}^3 \). \[ n_{Si} = 5 \times 10^{28} \, \text{atoms/m}^3 \times \frac{1 \, \text{m}^3}{10^6 \, \text{cm}^3} = 5 \times 10^{28} \times 10^{-6} \, \text{atoms/cm}^3 = 5 \times 10^{22} \, \text{atoms/cm}^3 \] ### Step 3: Calculate the Number of Acceptor Atoms Given that there is 1 helium atom for every \( 5 \times 10^7 \) silicon atoms, we can find the number of helium atoms (acceptor atoms) per cubic centimeter using the formula: \[ n_{He} = \frac{n_{Si}}{5 \times 10^7} \] Substituting the value of \( n_{Si} \): \[ n_{He} = \frac{5 \times 10^{22}}{5 \times 10^7} = \frac{5}{5} \times 10^{22 - 7} = 1 \times 10^{15} \, \text{atoms/cm}^3 \] ### Step 4: Conclusion The number of acceptor atoms in silicon per cubic centimeter is: \[ \boxed{1 \times 10^{15} \, \text{atoms/cm}^3} \]
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AAKASH INSTITUTE ENGLISH-SEMICONDUCTOR ELECTRONICS: MATERIALS, DEVICES AND SIMPLE CIRCUITS-Assignment (Section -A (Objective Type question (One option is correct))
  1. The circuit is equivalent to

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  2. The output y, when all three inputs are first high and then low, will ...

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  3. A silicon specimen is made into a P-type semiconductor by dopping, on ...

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  4. Consider the junction diode is ideal. The value of current through the...

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  5. Negative feedback

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  6. The current obtained from a simple filterless rectifier is

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  7. In a p-n junction depletion region has a thickness of the order of

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  8. In a properly biased transistor-

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  9. In an n-p-n transistor, the collector current is 10 mA. If 90% of the ...

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  10. Application of forward bias to p-n junction

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  11. Intrinsic semiconductor at absolute zero temperature is a

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  12. An NPN-transistor circuit is arranged as shown in figure. It is

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  13. Four equal resistors, each of resistance 10 ohm are connected as shown...

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  14. In a semiconducting material the mobilities of electrons and holes are...

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  15. Which of the following gate is called universal gate

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  16. A full wave rectifier circuit along with the input and output are show...

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  17. In a p-n junction diode having depletion layer of thickness 10^(-6)m, ...

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  18. What is the voltage gain in a common emitter amplifier, where output r...

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  19. Barrier potential of a p-n junction diode does not depend on -

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  20. The following truth table corresponds to the logic gate

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