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Potential barrier developed in a junctio...

Potential barrier developed in a junction diode opposes the flow of

A

Free electrons in n-side and holes in p-side

B

free electrons in p-side and holes in n-side

C

Only free electrons in n-side

D

Only holes in p-side

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The correct Answer is:
A
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AAKASH INSTITUTE ENGLISH-SEMICONDUCTOR ELECTRONICS: MATERIALS, DEVICES AND SIMPLE CIRCUITS-Assignment (Section -A (Objective Type question (One option is correct))
  1. In an n-p-n transistor, the collector current is 10 mA. If 90% of the ...

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  2. Application of forward bias to p-n junction

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  3. Intrinsic semiconductor at absolute zero temperature is a

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  4. An NPN-transistor circuit is arranged as shown in figure. It is

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  5. Four equal resistors, each of resistance 10 ohm are connected as shown...

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  6. In a semiconducting material the mobilities of electrons and holes are...

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  7. Which of the following gate is called universal gate

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  8. A full wave rectifier circuit along with the input and output are show...

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  9. In a p-n junction diode having depletion layer of thickness 10^(-6)m, ...

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  10. What is the voltage gain in a common emitter amplifier, where output r...

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  11. Barrier potential of a p-n junction diode does not depend on -

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  12. The following truth table corresponds to the logic gate

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  13. Which of the following is not equal to 1 in Boolean algebra ?

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  14. Potential barrier developed in a junction diode opposes the flow of

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  15. Which of the following diodes is used in unbiased condition ?

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  16. Which of the following materials can be used for making solar cell ?

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  17. If a full wave rectifier circuit is operating from 50 Hz mains, the fu...

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  18. A transistor cannot be used as an

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  19. The P-N junction is-

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  20. What is the value of output voltage V(0) in the circuit shown in the f...

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