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The emitter region in a PNP-junction tra...

The emitter region in a PNP-junction transistor is more heavily doped than the base region, so that

A

The flow across the base region will be only because of electrons

B

The flow across the base region will be only because of holes

C

Recombination will be decreased in the base region

D

Base current will be high

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The correct Answer is:
To solve the question regarding the doping levels in a PNP-junction transistor and its implications, we can break down the reasoning step by step: ### Step-by-Step Solution: 1. **Understanding Doping in PNP Transistor**: - In a PNP transistor, the emitter is made of p-type material, and it is heavily doped with holes (positive charge carriers). The base is also p-type but is lightly doped. 2. **Role of Heavily Doped Emitter**: - The heavy doping in the emitter means that there is a high concentration of holes available for conduction. This is crucial for the transistor's operation, as it allows for efficient injection of holes into the base region. 3. **Base Region Characteristics**: - The base region, being lightly doped, has a lower concentration of holes compared to the emitter. This means that when holes are injected from the emitter into the base, there are fewer holes available to recombine with electrons. 4. **Recombination Process**: - Recombination occurs when holes from the emitter meet electrons in the base. Since the base is lightly doped, the likelihood of recombination is reduced. This means that more holes can travel through the base without recombining. 5. **Conclusion on Recombination**: - Since the emitter is heavily doped and the base is lightly doped, the number of recombinations in the base region is decreased. This allows for a greater number of holes to reach the collector region, enhancing the transistor's efficiency. 6. **Final Answer**: - Therefore, the correct answer is that the recombination will be decreased in the base region due to the heavy doping of the emitter compared to the base.
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AAKASH INSTITUTE ENGLISH-SEMICONDUCTOR ELECTRONICS: MATERIALS, DEVICES AND SIMPLE CIRCUITS-Assignment (Section -B (Objective type question (one option is correct))
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  3. The emitter region in a PNP-junction transistor is more heavily doped ...

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  4. There is a gate with two inputs A and B, and one output Y. using the i...

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  5. In a P-N junction , for a 0.2 V change in the forward bias voltage, th...

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  6. An n-type semiconductor has donor levels at 500 meV above the valence ...

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  7. In a common emitter amplifier , when a signal of 40 mV is added to the...

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  8. The output of the given logica gate is

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  9. Two identical capacitors A and B are charged to the same potential V a...

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  10. The relationship between alpha and beta is given by

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  11. Two identical p-n junctions may be connected in series in which a batt...

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  12. In a silicon transistor, a change of 7.89 mA in the emitter current pr...

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  13. In a doped semiconductor, the impurity level is 40 meV above the valen...

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  14. In figure the input is across the terminals A and C and the output is ...

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  15. In the given figure, a transistor is connected in common emitter confi...

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  16. A transistor is used in Common-emitter mode in an amplifier circuits. ...

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  17. In the given circuit, calculate the ratio of currents through the batt...

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  18. In a transistor the current amplification alpha is '0.9', when connect...

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  19. A transistor is connected in common base configuration, the collector ...

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  20. In the given circuit , the voltage across the base emitter junction is

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