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In p-n junction diode, near junction hol...

In p-n junction diode, near junction holes combine with electrons, and impurity ions form a barrier potential which opposes the recombination of electron-hole pairs. Value of barriers potential for Si is 0.7 volt and for Ge is 0.3 V. thus charge density at the junction becomes zero and an electric field is produced near junction. this region is called depletion layer. Thickness of depletion layer is of the order of `10^(-6)` meter. in forward bias p terminal is connected with the positive terminal of cell and n is connected with negative terminal of cell and n is connected with negative terminal of cell. as forward voltage is increased, current increases exponentially.
For Si diode minimum required forward voltage so that current can flow is

A

0.3V

B

1.4V

C

0.7V

D

zero

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The correct Answer is:
To solve the question regarding the minimum required forward voltage for a silicon diode so that current can flow, we can follow these steps: ### Step-by-Step Solution: 1. **Understand the Concept of Barrier Potential**: - In a p-n junction diode, a barrier potential is created due to the recombination of electrons and holes near the junction. This potential opposes the flow of charge carriers. 2. **Identify the Barrier Potential for Silicon**: - The barrier potential for silicon (Si) is given as 0.7 volts. This means that in order to allow current to flow through the diode, we need to apply a voltage that can overcome this barrier. 3. **Forward Biasing the Diode**: - When the diode is forward biased, the p-type material is connected to the positive terminal of the battery, and the n-type material is connected to the negative terminal. This arrangement helps in reducing the barrier potential. 4. **Determine the Minimum Forward Voltage**: - To allow current to flow, the applied forward voltage must be equal to or greater than the barrier potential. For silicon, this value is 0.7 volts. Therefore, the minimum required forward voltage is 0.7 volts. 5. **Conclusion**: - Based on the above analysis, the minimum required forward voltage for a silicon diode to allow current to flow is **0.7 volts**. ### Final Answer: The minimum required forward voltage so that current can flow in a silicon diode is **0.7 volts**. ---
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In p-n junction diode, near junction holes combine with electrons, and impurity ions form a barrier potential which opposes the recombination of electron-hole pairs. Value of barriers potential for Si is 0.7 volt and for Ge is 0.3 V. thus charge density at the junction becomes zero and an electric field is produced near junction. this region is called depletion layer. Thickness of depletion layer is of the order of 10^(-6) meter. in forward bias p terminal is connected with the positive terminal of cell and n is connected with negative terminal of cell and n is connected with negative terminal of cell. as forward voltage is increased, current increases exponentially. As forward voltage is increased barrier potential in p-n junction diode is A. increased B. Decreased C. remain same D. nothing can be said.

In p-n junction diode, near junction holes combine with electrons, and impurity ions form a barrier potential which opposes the recombination of electron-hole pairs. Value of barriers potential for Si is 0.7 volt and for Ge is 0.3 V. thus charge density at the junction becomes zero and an electric field is produced near junction. this region is called depletion layer. Thickness of depletion layer is of the order of 10^(-6) meter. in forward bias p terminal is connected with the positive terminal of cell and n is connected with negative terminal of cell and n is connected with negative terminal of cell. as forward voltage is increased, current increases exponentially. Correct graph for variation of charge density with distance from the junction is

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