Home
Class 12
PHYSICS
Statement1: In forward biasing current s...

Statement1: In forward biasing current starts when minimum voltage of battery becomes equal to knee voltage
Statement2: Upto knee voltage barrier potential of diode prevents the motion of holes and electrons.

Text Solution

Verified by Experts

The correct Answer is:
A
Promotional Banner

Topper's Solved these Questions

  • SEMICONDUCTOR ELECTRONICS: MATERIALS, DEVICES AND SIMPLE CIRCUITS

    AAKASH INSTITUTE ENGLISH|Exercise Assignment (Section -C(Linked comprehension type question))|3 Videos
  • SEMICONDUCTOR ELECTRONICS (MATERIAL, DEVICES AND SIMPLE CIRUITS )

    AAKASH INSTITUTE ENGLISH|Exercise Assignment SECTION - D (Assertion & reason type Question)|10 Videos
  • SYSTEM OF PARTICLES AND ROTATIONAL MOTION

    AAKASH INSTITUTE ENGLISH|Exercise Try Yourself|63 Videos

Similar Questions

Explore conceptually related problems

Statement 1: When radius of a circular loop carrying current is doubled, its magnetic moment becomes four times. Statement 2: Magnetic moment depends on the area of the loop.

The reverse-biased current of a particular p-n junction diode increases when it is expoesed to light of wavelength less than or equal to 600nm.Assume that the increases in carrier concentration takes place due to the creation of new hole-electron pairs by the light.Find the band gap.

Statement-1: Magnitude of average velocity is equal to average speed, if velocity is constant. Statement-2: It is possible when the direction of motion keeps changing.

Statement-1 : When two charged spheres are touched then total charge is h? Statement-2: Flow of charge take place untill potential equals.

In a p-n junction diode, the currect I can expressed as I=I_(0) exp((eV)/(2k_(B)T)-1) where I_(0) is called the reverse saturation current, V is the voltage across the diode and is positive for forward bias and negative for reverse bias, and I is the current through the diode, K_(B) is the Boltzmann constant (8.6 xx 10^(-5) eV//K) and T is the absolute temperature. If for a given diode I_(o) = 5 xx 10^(-12) A and T = 300 K , then (a) What will be the forward current at a formward voltage of 0.6V ? (b) What will be the increase in the current if the voltage across the diode is increased to 0.7 V ? ( c) What is the dynamic resistance ? (d) What will be current if reverse bias voltage changes from 1 V to 2 V ?

The junction diode in the following circuit requires a minimum current of 1 mA to be above the knee point (0.7 V) of its I-V characterstic curve. The voltage across the diode is independent of current above the knee point. If V_(B)=5 V , then the maximum value of R so that the voltage is above the knee point, will be

In a reverse biased diode, when the applied voltage changes by 1V , the current is found to change by 0.5muA . The reversebiase resistance of the diode is

In p-n junction diode, near junction holes combine with electrons, and impurity ions form a barrier potential which opposes the recombination of electron-hole pairs. Value of barriers potential for Si is 0.7 volt and for Ge is 0.3 V. thus charge density at the junction becomes zero and an electric field is produced near junction. this region is called depletion layer. Thickness of depletion layer is of the order of 10^(-6) meter. in forward bias p terminal is connected with the positive terminal of cell and n is connected with negative terminal of cell and n is connected with negative terminal of cell. as forward voltage is increased, current increases exponentially. For Si diode minimum required forward voltage so that current can flow is

In p-n junction diode, near junction holes combine with electrons, and impurity ions form a barrier potential which opposes the recombination of electron-hole pairs. Value of barriers potential for Si is 0.7 volt and for Ge is 0.3 V. thus charge density at the junction becomes zero and an electric field is produced near junction. this region is called depletion layer. Thickness of depletion layer is of the order of 10^(-6) meter. in forward bias p terminal is connected with the positive terminal of cell and n is connected with negative terminal of cell and n is connected with negative terminal of cell. as forward voltage is increased, current increases exponentially. As forward voltage is increased barrier potential in p-n junction diode is A. increased B. Decreased C. remain same D. nothing can be said.

Consider the following statements A and B and identify the correct answer (A) A Zener diode is always connected in reverse bias to use it as voltage regulator. (B) The potential barrier of a p-n junction lies between 0.1 to 0.3 V , approximately.