A `p-n` photodiode is fabricate from a semiconductor with a band gap of `2.5eV`. It can detect a singal of wavelength

A p-n photodiode is fabricated from a semiconductor with a band gap of 2.5 eV. It can detect a signal of wavelength ……..

A p-n photodiode is fabricated from a semiconductor with a band gap of 2.5 eV . It can detect a signal of wavelength

A p-n photodiode is fabricated from a semiconductor with a band gap of 2.5 eV . It can detect a signal of wavelength

A p-n photodiode is farbricated from a semiconductor with a band gap of 2.5eV. It can detect a signal of wavelength:

A P-N photodiode is fabricated from a semiconductor with a band gap of 2.5 eV. It can detect a signal of wavelength :-