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In a p-n junction diode, the current I c...

In a p-n junction diode, the current I can be expressed as `I = I_0 (exp ((eV)/(2k_BT))-1)` where I_0 is called the reverse saturation current, V is the voltage across the diode and is positive for forward bias and negative for reverse bias, and I is the current through the diode, k_B is th Boltzmann constant (8.6xx 10^ -5 eV/K) and T is the absolute temperature. If for a given diode I_0 = 5 xx 10^ -12 A and T = 300 K, then - What will be the forward current at a forward voltage of 0.6 V?

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In a p-n junction diode, the current I can be expressed as I = I_0 (exp ((eV)/(2k_BT))-1) where I_0 is called the reverse saturation current, V is the voltage across the diode and is positive for forward bias and negative for reverse bias, and I is the current through the diode, k_B is th Boltzmann constant (8.6xx 10^-5 eV/K) and T is the absolute temperature. If for a given diode I_0 = 5 xx 10^ -12 A and T = 300 K, then - What will be the current if reverse bias voltage changes from 1 V to 2 V?

In a p-n junction diode, the current I can be expressed as I = I_0 exp ((eV)/(2k_BT)) where I_0 is called the reverse saturation current, V is the voltage across the diode and is positive for forward bias and negative for reverse bias, and I is the current through the diode, k_B is the Boltzmann constant (8.6xx 10^-5 (eV)/K) and T is the absolute temperature. If for a given diode I_0 = 5 xx 10^-12 A and T = 300 K, then - What will be the increase in the current if the voltage across the diode is increased from 0.6 V to 0.7 V?

In a p-n junction diode, the current I can be expressed as I = I_0 exp ((eV)/(2k_BT)) where I_0 is called the reverse saturation current, V is the voltage across the diode and is positive for forward bias and negative for reverse bias, and I is the current through the diode, k_B is th Boltzmann constant (8.6xx 10^-5 (eV)/K) and T is the absolute temperature. If for a given diode I_0 = 5 xx 10^-12 A and T = 300 K, then - What is the dynamic resistance when the voltage is increased to 0.7 V from 0.6 V?

In the figure the emitter forward bias or reverse bias?

Discuss the variation of current with voltage in a P-N Junction diode when it is forward biased.

In the following circuits, which of the diodes is forward-biased and which is reverse-biased and why?

PSEB-SEMICONDUCTOR ELECTRONICS: MATERIALS, DEVICES, AND SIMPLE CIRCUITS-EXERCISE
  1. Which of the statements given in is true for p-type semiconductors.

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  2. Carbon, silicon and germanium have four valence electrons each. These...

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  3. In an unbiased p-n junction, holes diffuse from the p-region to n-regi...

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  4. When a forward bias is applied to a p-n junction, it

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  5. For transistor action, which of the following statements are correct:

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  6. For a transistor amplifier, the voltage gain

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  7. In half-wave rectification, what is the output frequency if the input ...

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  8. For a CE-transistor amplifier, the audio signal voltage across the col...

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  9. Two amplifiers are connected one after the other in series (cascaded)....

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  10. A p-n photodiode is fabricated from a semiconductor with band gap of 2...

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  11. The number of silicon atoms per m^3 is 5 xx 10^28. This is doped simul...

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  12. In an intrinsic semiconductor the energy gap Eg is 1.2eV . Its hole mo...

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  13. In a p-n junction diode, the current I can be expressed as I = I0 (exp...

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  14. In a p-n junction diode, the current I can be expressed as I = I0 exp ...

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  15. In a p-n junction diode, the current I can be expressed as I = I0 exp ...

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  16. In a p-n junction diode, the current I can be expressed as I = I0 (exp...

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  17. Write the truth table for a NAND gate connected as given in Fig. 14.4...

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  18. You are given two circuits as shown in Fig. 14.46, which consist of NA...

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  19. Write the truth table for circuit given in Fig. 14.47 below consisting...

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  20. Write the truth table for the circuits given in Fig. 14.48 consisting ...

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