The statement which is false among the following is

Options

A. Silicon carbide has a three dimensional structure with each silicon and carbon atom being tetrahedrally surrounded by four atoms of the other kine
B. Carbon can form `C=S` bond because C has the ability to form `dpi-dpi` bond
C. Boron nitride has satructure similar to that of graphite
D. Graphite conducts electricity because of availability of delocalised `pi` electrons

Answer

To determine which statement among the provided options is false, we will analyze each statement one by one.

### Step-by-Step Solution:

1. **Statement Analysis**:
- **Statement 1**: "Silicon carbide has a three-dimensional structure with each silicon and carbon atom being tetrahedrally surrounded by four atoms of the other kind."
- **Analysis**: Silicon carbide (SiC) indeed has a three-dimensional tetrahedral structure where each silicon atom is surrounded by four carbon atoms and vice versa. This statement is **true**.

2. **Statement 2**: "Carbon can form C-S bond because carbon has the ability to form dπ-dπ bond."
- **Analysis**: Carbon has an electronic configuration of 1s² 2s² 2p², which means it does not have d orbitals to participate in dπ-dπ bonding. Therefore, carbon cannot form C-S bonds through dπ-dπ interactions. This statement is **false**.

3. **Statement 3**: "Boron nitride has the structure similar to that of graphite."
- **Analysis**: Boron nitride (BN) can exist in a hexagonal form similar to graphite, where boron and nitrogen atoms alternate in a planar structure. This statement is **true**.

4. **Statement 4**: "Graphite conducts electricity because of the availability of delocalized pi electrons."
- **Analysis**: In graphite, the carbon atoms are arranged in layers with delocalized π electrons that allow for electrical conductivity. This statement is **true**.

### Conclusion:
The false statement among the provided options is:
- **Carbon can form C-S bond because carbon has the ability to form dπ-dπ bond.**