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When p-n junction diode is forward biase...

When `p-n` junction diode is forward biased then

A

the depletion region is reduced and barrier height is increased

B

the depletion region is widened and barrier height is reduced

C

both the depletion region and barrier height are reduced

D

both the depletion region and barrier height are increased

Text Solution

AI Generated Solution

The correct Answer is:
To solve the question regarding the behavior of a p-n junction diode when it is forward biased, we can analyze the effects of forward bias on the depletion region and the barrier height step by step. ### Step-by-Step Solution: 1. **Understanding the P-N Junction**: - A p-n junction diode consists of p-type and n-type semiconductors. The p-type has an abundance of holes (positive charge carriers), while the n-type has an abundance of electrons (negative charge carriers). - At the junction, electrons from the n-type region and holes from the p-type region recombine, creating a depletion region devoid of charge carriers. 2. **Forward Biasing the Diode**: - Forward biasing occurs when the positive terminal of a voltage source is connected to the p-type material and the negative terminal to the n-type material. - This external voltage opposes the built-in potential barrier of the junction. 3. **Effect on the Depletion Region**: - When forward bias is applied, the external electric field generated by the voltage source reduces the width of the depletion region. - The reason is that the external voltage pushes the holes towards the junction from the p-side and the electrons from the n-side, allowing more charge carriers to recombine and thus narrowing the depletion zone. 4. **Effect on the Barrier Height**: - The potential barrier (or barrier height) is the energy required for charge carriers to cross the junction. - With the application of forward bias, this barrier height decreases because the external voltage reduces the built-in potential barrier, making it easier for charge carriers to move across the junction. 5. **Conclusion**: - Therefore, when a p-n junction diode is forward biased, both the depletion region and the barrier height are reduced. ### Final Answer: The correct option is that both the depletion region and barrier height are reduced. ---
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