A p -n photodiode is fabricated from a semiconductor with band gap of `2.8 eV`. Can it detect a wavelength of `6000nm` ?

Three photo diods D_1 , D_2 and D_3 are made of semiconductors having band gaps of 2.5 eV, 2eV and 3eV, respectively. Which ones will able to detect light of wave length 6000 overset @(A) ?

An LED is constructed from a p-n junction based on a certain semi conducting material whose energy gap is 1.9eV then the wavelength of the emitted light is

for a photodiode , the forbidden energy gap (E_8) of the material used is 2.8eV and wavelength of radiations ( lambda ) incident on it is 5780 A. then the emission of electrons is possible when incident radiation have

The electron in hydrogen atom is given by E_n = (-2.18 xx 10^-18)//n^2 J . Calculate the energy required to remove an electron completely from the n = 2 orbit. What is the longest wavelength of light in cm that can be used to cause this transition?

in a semiconductor diode, a p-side is earthed and n-side is applied a potential of -2V , the diode will

The work function of metals is in the range of 2 eV to 5 eV. Find which of the following wavelength of light cannot be used for photoelectric effect. (Consider, Planck's constant = 4 xx 10^(-15) eV.s , velocity of light = 3 xx 10^(8) m//s )

A star producing light of wavelenght 6000 Å moves away from the earth with a speed of 5 km/s. Due to Doppler effect, the shift in wavelength will be ( c = 3 xx 10^8 m/s)

In a biprism experiment , the distance between the slit and the focal plane of the eyepiece is 1.2 m and the wavelength of light used is 5000 overset (@)(A) . When a convex lens is interposed (between the biprism and eyepiece) the images of the slits in the two positions are 5 mm and 1.8 mm apart . The distance between the centre of the pattern and twelfth dark band is

When light of wavelength 6000oerset@A falls on a metal surface, photoelectrons are emitted from it with a velocity of 2 xx 10^5ms-1 .Calculate the work function of the metal in eV.