If the electron drift speed is so small and the electron's charge is small, how can we still obtain large amount of current in a conductor?

If drift velocity of electron as well as charge on electron is very small, how can we still obtain large amount of current in aconductor?

How can we say that electric current is due to flow of charge?

What is drift velocity of electrons? How do you explain the flow of current in a conductor based on this?

Since drift velociy of electrons is very small, how then is current established almost the instant a circuit is closed?

Doping mens introduction of small amount of impurities like phosphorus , arsenic or boron into the pure crystal . In pure silicon , ther are four valenices used in bonding with other four adjacent silicon crystal is doped with a group -15 element ( with five valence electron ) such as P, As , or Bi , the structure of the crystal lattic remains unchanged . Out of the five valence electron of group -15 doped element four element are used in normal covalent bonding with silicon while fiffth electron is delcoasiled and thus conducts electricity Doping a silicon crystal with a group -13 element (with three valence electrons ) such as B, Al, Ga or In products a semiconductor with three electrons in in dopant . The place where fourth electron is missing is called an electron vacancy or hole . Such hole can move throught the crystal like a positive charge giving rise conduction of electricity. No. of valene electrons in silicon are :

Doping mens introduction of small amount of impurities like phosphorus , arsenic or boron into the pure crystal . In pure silicon , ther are four valenices used in bonding with other four adjacent silicon crystal is doped with a group -15 element ( with five valence electron ) such as P, As , or Bi , the structure of the crystal lattic remains unchanged . Out of the five valence electron of group -15 doped element four element are used in normal covalent bonding with silicon while fiffth electron is delcoasiled and thus conducts electricity Doping a silicon crystal with a group -13 element (with three valence electrons ) such as B, Al, Ga or In products a semiconductor with three electrons in in dopant . The place where fourth electron is missing is called an electron vacancy or hole . Such hole can move throught the crystal like a positive charge giving rise conduction of electricity. Silicon that has been dopend with group - 15 elements is called :

Doping mens introduction of small amount of impurities like phosphorus , arsenic or boron into the pure crystal . In pure silicon , ther are four valenices used in bonding with other four adjacent silicon crystal is doped with a group -15 element ( with five valence electron ) such as P, As , or Bi , the structure of the crystal lattic remains unchanged . Out of the five valence electron of group -15 doped element four element are used in normal covalent bonding with silicon while fiffth electron is delcoasiled and thus conducts electricity Doping a silicon crystal with a group -13 element (with three valence electrons ) such as B, Al, Ga or In products a semiconductor with three electrons in in dopant . The place where fourth electron is missing is called an electron vacancy or hole . Such hole can move throught the crystal like a positive charge giving rise conduction of electricity. Silicon that has been dopend with group - 13 elements is called :