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The breakdown in a reverse biased p-n ju...

The breakdown in a reverse biased p-n junction diode is more likely to occur due to

A

large velocity of the minority charge carriers if the doping concentratin is small.

B

large velocity of the minority charge carriers if the doping concentration is large.

C

strong electric field in a depletion region if the doping concentration is small.

D

strong electric field in a depletion region if the doping concentration is large.

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