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Suppose a 'n-type' wafer is created by d...

Suppose a 'n-type' wafer is created by doping Si crystal having `5xx10^(28) at oms//m^3` with 1ppm concentration of As. On the surface 220 ppm Boron is added to create 'P' region in this wafer. Considering `n_i=1.5 xx 10^16m^-3`
Calculate the densities of the charge carriers in the n and p regions.

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